BSS138LT1G vs BSS138LT1G-VB Comparison
Detailed side-by-side comparison of BSS138LT1G by onsemi and BSS138LT1G-VB by VBsemi Elec. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS138LT1G | BSS138LT1G-VB |
|---|---|---|
| Brand | onsemi | VBsemi Elec |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 200 mA (Ta) | — |
| Power Dissipation (PD) | 225 mW (Ta) | — |
| On-Resistance Max (RDS(on)) | 3.5 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate-Source Voltage Max (VGS) | [DATA_NEEDED: maximum gate-source voltage] | — |
| Configuration | Single FET | Single FET |
| Channel Mode | Enhancement Mode | — |
| Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | Compliant (RoHS Compliant and Pb-free per Easybom) | Compliant |
| Product Family | BSS138LT Series Small Signal MOSFET | — |
| Typical Applications | Computers, printers, cordless phones, DC-DC converters | — |
| Drain-Source Voltage (Vdss) | — | 50 V |
| Continuous Drain Current (Id) | — | 200 mA (Ta) |
| Power Dissipation (Pd) | — | 225 mW (Ta) |
| Gate Threshold Voltage (Vgs th) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on)] |
| Drive Voltage | — | [DATA_NEEDED: drive voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Manufacturer | — | VBsemi Elec |
| Equivalent To | — | onsemi BSS138LT1G |