IRF7832TRPBF - 30V N-Channel HEXFET MOSFET, 20A, SO-8 | Infineon
料号： IRF7832TRPBF ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.81 | $1.81 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
IRF7832TRPBF 概述
A power MOSFET such as the IRF7832TRPBF is the active switching element in a synchronous buck or synchronous boost converter. The MOSFET controls current flow between the input supply and the inductor/transformer during the high-side and low-side switching intervals. Compared to a Schottky rectifier, a low-RDS(on) synchronous MOSFET dramatically reduces conduction loss, raising overall converter efficiency by 3-7 percent at full load. The IRF7832TRPBF belongs to the discrete power MOSFET family within Infineon's HEXFET product line, characterized by a vertical DMOS cell structure and a trench-gate process that minimize both on-resistance and gate charge.
Key specifications include a VDS rating of 30V, VGS of +/-20V maximum, a continuous ID of 20A at TA=25C, an RDS(on) maximum of 4 mOhm at VGS=10V, and a total gate charge of 34 nC typical. The threshold voltage (VGS(th)) is typically in the 1.0V to 2.5V range. The SO-8 package provides low thermal resistance when mounted on a 1-square-inch copper pad, enabling 2.5W dissipation at TA=25C without an external heatsink.
The HEXFET process uses a vertical DMOS architecture with planar cell geometry, yielding extremely low on-resistance per unit silicon area. This allows Infineon to fit a 20A/30V die into the small SO-8 outline, delivering DPAK-class performance at roughly one-third the board area. The 34 nC total gate charge keeps switching losses low at frequencies up to 500 kHz in synchronous rectifier positions.
Typical applications include synchronous rectification in notebook processor VRM stages, isolated DC-DC converter secondary-side rectifiers in networking switches, point-of-load (POL) modules, and battery protection circuits in 1- to 4-cell lithium-ion packs. The 30V rating provides ample margin for 12V bus systems handling transients up to 20V.
When designing with the IRF7832TRPBF, ensure the gate drive voltage swings above 10V to achieve the rated 4 mOhm on-resistance, and place the gate series resistor (typically 4.7-10 ohm) close to the device to suppress ringing. The SO-8 thermal pad must be soldered to a copper pour of at least 1 square inch to meet the 2.5W power dissipation rating.
This page synthesizes distributor pricing, SO-8 drop-in alternatives, and practical synchronous-rectifier design guidance not aggregated on a single manufacturer or distributor product page.
直接替换替代料： IRF7832TRPBF ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IRF7832TRPBF （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Technology, MSL Level, Avalanche Rated.
快速对比工具——选择替代料号进行并排对比：
IRF7309TRPBF
✅ 直接替换✓ 有现货
$0.35 / 个
查看数据手册 →IRFL014NTRPBF
✅ 直接替换✓ 有现货
$0.3 / 个
查看数据手册 →BSS205NH6327XTSA1
✅ 直接替换✓ 有现货
$0.12 / 个
查看数据手册 →IRLR3410TRPBF
✅ 直接替换✓ 有现货
$0.81 / 个
查看数据手册 →Si4840DY
✅ 直接替换📋 参考替代料（不在目录中）
Si4880DY
✅ 直接替换📋 参考替代料（不在目录中）
NTMFS4834N
✅ 直接替换📋 参考替代料（不在目录中）
IRF7832TRPBF 最大额定值与电气特性
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7832TRPBF |
| FET Type | N-Channel |
| Technology | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | 34 nC |
| Power Dissipation (PD) at TA=25C | 2.5 W |
| 工作温度范围 | -55 C to +150 C (TJ) |
| 封装 | 8-SO (SOIC-8) |
| 安装类型 | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
IRF7832TRPBF 引脚配置
| 引脚 1 | GATE — Gate control input |
| 引脚 2 | SOURCE — Source connection (return) |
| 引脚 3 | SOURCE — Source connection (return) |
| 引脚 4 | NC — Not connected (no-connect per datasheet) |
| 引脚 5 | DRAIN — Drain connection (load) |
| 引脚 6 | DRAIN — Drain connection (load) |
| 引脚 7 | DRAIN — Drain connection (load) |
| 引脚 8 | DRAIN — Drain connection (load) |
安全工作区 (DC, TJ=150C)
典型应用
IRF7832TRPBF 适用于 6 应用s: Notebook Processor VRM Synchronous Rectifier, Networking Switch Isolated DC-DC Secondary Rectifier, Point-of-Load (POL) Synchronous Buck Module, Multi-Cell Lithium-Ion Battery Pack Protection, USB-C Power Delivery (PD) Sink Synchronous Rectifier, Hot-Swap Controller Load Switch.
Notebook Processor VRM Synchronous Rectifier
The IRF7832TRPBF is widely deployed as the low-side synchronous rectifier MOSFET in 1- to 3-phase buck VRMs powering notebook CPUs. Its 4 mOhm RDS(on) at VGS=10V minimizes conduction loss during the inductor charge and discharge phases, while the 34 nC total gate charge keeps switching losses manageable at 300-500 kHz typical VRM switching frequencies. Compared to a Schottky rectifier, the IRF7832TRPBF improves full-load efficiency by 3-7 percent, extending battery runtime. The SO-8 footprint enables dense layouts on 4-layer notebook motherboards, and the part pairs naturally with the IRF7822 high-side FET in complementary sync-FET designs.
推荐
Networking Switch Isolated DC-DC Secondary Rectifier
In 48V-input isolated DC-DC converters for networking switches and routers, the IRF7832TRPBF serves as the secondary-side synchronous rectifier on the 12V or 5V output rail. Its 30V VDS rating comfortably exceeds the 15-20V rectified secondary voltage with adequate derating margin. The 4 mOhm RDS(on) keeps rectifier loss well under 1W at 5A load, supporting 95 percent+ converter efficiency required by telecom and data center standards. The SO-8 package enables compact quarter-brick and eighth-brick module designs where PCB real estate is at a premium, and the part's avalanche energy rating allows safe operation during output short-circuit recovery events.
推荐
Point-of-Load (POL) Synchronous Buck Module
The IRF7832TRPBF is well-suited for non-isolated point-of-load synchronous buck modules delivering 0.8-3.3V rails at 5-15A from a 5V or 12V intermediate bus. Its 4 mOhm on-resistance at 10V gate drive and 34 nC gate charge yield high efficiency across the 200-800 kHz POL switching frequency range. The SO-8 thermal performance supports continuous operation at full rated current on a properly designed 1-square-inch copper pad without an external heatsink. The part is commonly paired with a smaller-signal N-channel FET (such as Si2302) as the high-side switch in cost-optimized POL designs.
推荐
Multi-Cell Lithium-Ion Battery Pack Protection
In 1- to 4-cell lithium-ion battery packs, the IRF7832TRPBF functions as the low-side protection MOSFET or load switch, controlling discharge current up to 20A continuous. The 30V VDS rating provides safe margin above the 16.8V maximum 4S pack voltage, and the low RDS(on) reduces pack-internal voltage drop to under 80 mV at full load. The SO-8 footprint is compatible with battery management boards from Texas Instruments, Maxim, and Analog Devices. The part's avalanche rating handles inductive load transients from motor or speaker kickback in portable equipment.
推荐
USB-C Power Delivery (PD) Sink Synchronous Rectifier
The IRF7832TRPBF is increasingly used as the synchronous rectifier in USB-C PD sink designs accepting 5V, 9V, 15V, or 20V input and delivering 5-15W to the downstream load. Its 30V VDS rating handles 20V USB-PD rails with comfortable margin, and the 4 mOhm RDS(on) minimizes full-load drop at 5V/3A operation. The compact SO-8 package fits within the tight PCB area constraints of USB-C dongles and hubs. The part's fast switching characteristics support the 100 kHz to 1 MHz switching frequencies common in USB-PD controllers from TI and Cypress/Infineon.
推荐
Hot-Swap Controller Load Switch
The IRF7832TRPBF serves as the main pass MOSFET in 12V hot-swap and load-switch circuits for server backplanes, disk arrays, and industrial control systems. Its 20A continuous rating handles typical 12V/10A loads, while the 30V VDS rating tolerates 12V bus transients up to 20V during inductive load switching. The 4 mOhm RDS(on) reduces steady-state dissipation to under 400 mW at 10A, easing thermal management. The SO-8 footprint allows the part to be paired with hot-swap controllers such as the LTC4217 or TPS2490 in standard 12V distributed-architecture designs.
推荐
推荐产品汇总
工程参考数据： IRF7832TRPBF ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IRF7309TRPBF | IRFL014NTRPBF | BSS205NH6327XTSA1 | Si4840DY | Si4880DY | NTMFS4834N |
|---|---|---|---|---|---|---|---|
| Package | 8-SO (SOIC-8) | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same | 8-SO (SOIC-8) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay | Vishay | onsemi |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 55 V | 20 V | 30 V | 30 V | 30 V |
| Approximate 1000-piece price (USD) | $0.92 | $0.95 | $1.10 | $0.60 | $1.05 | $0.98 | $0.85 |
关键差异点
- Lowest RDS(on) in 30V SO-8 N-channel class from Infineon （对比 Vishay Si4840DY)
- Higher current capability at low VDS versus BSS205N （对比 Infineon BSS205NH6327XTSA1)
- Higher current rating at 30V versus higher-voltage IRLR3410 （对比 Infineon IRLR3410TRPBF)
设计说明
The IRF7832TRPBF is rated for 2.5W power dissipation at TA=25C with the SO-8 thermal pad soldered to a copper pour of at least 1 square inch (645 square millimeters) on the top-side copper layer. Estimated: at 10A continuous load and RDS(on) of 4 mOhm, conduction loss equals I² x R = 100 x 0.004 = 0.4W, well within the 2.5W envelope. However, at VIN=24V, VOUT=12V, and 10A load the synchronous FET sees hard-switching loss during the dead-time interval, adding roughly 0.5-1W. Mount on multi-layer PCBs (4 layers minimum) with thermal vias connecting the top SO-8 thermal pad to internal ground planes for sustained high-current operation above 15A.
Gate drive loop inductance must be minimized to prevent ringing that can exceed VGS rating and damage the gate oxide. Place the gate series resistor (4.7-10 ohm, selected by load current) within 5 mm of the gate pin, and route the gate trace directly above an unbroken ground plane return. For high-frequency synchronous rectifier positions above 500 kHz, place a 100 ohm resistor plus a ferrite bead in series with the gate to dampen Miller-effect ringing. The high-current source and drain traces should be 50 mils wide minimum and routed on the top-side copper with multiple thermal vias stitching to inner ground planes.
Do not assume the IRF7832TRPBF will fully enhance at VGS=4.5V logic-level gate drives - the part is specified for 10V VGS to achieve the rated 4 mOhm RDS(on), and at 4.5V the on-resistance rises to roughly 6-8 mOhm, eroding the efficiency advantage. Always use a gate driver capable of swinging above 10V for synchronous rectification positions. The body diode reverse recovery time can cause shoot-through if the dead-time control is poorly tuned; ensure the controller provides at least 30-50 ns dead time. Also verify that the source-pin current-carrying capacity is sufficient - the SO-8 design relies on pins 2-3 plus the thermal tab as the primary current path.
合规信息
RoHS compliant and lead-free per Infineon product page. The PBF suffix in the part number denotes lead-free (Pb-free) termination with matte-tin plating. Halogen-free per Infineon material declaration. AEC-Q100 not applicable - this is a commercial-grade part; for automotive-qualified equivalents consider the IRF7832TRPBF-ATMA1 or IRLR3410 variants.
