BSS306NH6327XTSA1 vs BSS138NH6327XTSA2 对比

详细并排对比 BSS306NH6327XTSA1 出自 Infineon 和 BSS138NH6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 量产中
Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 ✓ 量产中

规格对比

参数 BSS306NH6327XTSA1 BSS138NH6327XTSA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.14 $0.15
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
封装 SOT-23 (PG-SOT23), 3-pin PG-SOT-23 (3-pin)
安装类型 Surface Mount Surface Mount
工作温度 -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) Pb-free
Configuration Single N-Channel, 3-pin —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
工作温度范围 — [DATA_NEEDED: Tj max and operating range]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
无卤 — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

数据手册与资源

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