BSS308PEH6327XTSA1 vs BSS806NEH6327XTSA1 对比

详细并排对比 BSS308PEH6327XTSA1 出自 Infineon 和 BSS806NEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon

BSS806NEH6327XTSA1 ✓ 量产中

规格对比

参数 BSS308PEH6327XTSA1 BSS806NEH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.11 $0.14
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS P (small signal / small power MOSFET) —
晶体管类型 P-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) -30 V 20 V (maximum)
Continuous Drain Current (ID) -2 A (Ta) 2.3 A (Ta)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
工作温度范围 -55 °C to +150 °C [DATA_NEEDED: operating temperature range]
封装 / 外壳 PG-SOT23 (SOT-23-3) —
安装类型 Surface Mount Surface Mount
引脚数 3 —
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant —
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Part Number — BSS806NEH6327XTSA1
Mode of Operation — Enhancement-mode
On-Resistance RDS(on) — 57 mOhm (maximum)
封装 — PG-SOT23 (SOT-23-3)
引脚数量 — 3 (Gate, Drain, Source)
Lead Plating — Pb-free
RoHS Compliance — Yes (compliant)
AEC-Q101 Qualification — Qualified (automotive grade)

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