BSS308PEH6327XTSA1 vs IRLML6346TRPBF 对比

详细并排对比 BSS308PEH6327XTSA1 出自 Infineon 和 IRLML6346TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF ✓ 量产中

规格对比

参数 BSS308PEH6327XTSA1 IRLML6346TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.11 $0.18
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
晶体管类型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) 3.4 A (TA=25C)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
工作温度范围 -55 °C to +150 °C —
封装 / 外壳 PG-SOT23 (SOT-23-3) —
安装类型 Surface Mount Surface Mount
引脚数 3 —
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
Polarity — N-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
工作结温 — -55C to +150C
封装 — Micro3 / SOT-23
Technology — HEXFET Power MOSFET
MSL 等级 — 1
Lead-Free Finish — Yes (PBF suffix)

数据手册与资源

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