BSZ017NE2LS5IATMA1 vs BSC014N04LSTATMA1 对比

详细并排对比 BSZ017NE2LS5IATMA1 出自 Infineon 和 BSC014N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ 量产中
Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 量产中

规格对比

参数 BSZ017NE2LS5IATMA1 BSC014N04LSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.64 $0.41
Polarity N-Channel —
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (TA) 27 A —
Continuous Drain Current (TC) 40 A —
On-Resistance RDS(on) @ VGS=10V 1.7 mΩ —
On-Resistance Test Current 20 A —
Gate-Source Voltage (VGS) Rating ±16 V —
Gate Threshold Voltage VGS(th) 2 V @ 250 µA —
Total Gate Charge Qg 30 nC @ VGS=10V —
Input Capacitance Ciss 2000 pF @ VDS=12V —
Power Dissipation (TA) 2.1 W 3 W
Power Dissipation (TC) 50 W 115 W
工作结温 -55°C to +150°C —
封装 PG-TSDSON-8-FL (8-PowerTDFN) PG-TDSON-8 FL (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
Series / Family OptiMOS 5 25V —
RoHS 状态 Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSC014N04LSTATMA1
Technology — OptiMOS 5 (N-Channel Trench)
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) @ TA=25°C — 33 A
Continuous Drain Current (ID) @ TC=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R DS(on) max @ VGS=10V — 1.45 mΩ
R DS(on) typical @ VGS=10V — [DATA_NEEDED: RDS(on) typical]
工作温度范围 — -55°C to +150°C
引脚数量 — 8
MSL 等级 — MSL1
Lead-Free — Yes

数据手册与资源

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