BSZ031NE2LS5ATMA1 vs BSZ0901NSIATMA1 对比
详细并排对比 BSZ031NE2LS5ATMA1 出自 Infineon 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ031NE2LS5ATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.26 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | BSZ0901NSIATMA1 |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | — |
| Drain-Source Voltage (VDS) max | 25 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta=25C | 19 A | 25 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | — |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 30 W | — |
| 工作结温 | -55 C to +150 C | — |
| 封装 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Series | — | OptiMOS 25V |
| Technology | — | OptiMOS trench N-channel MOSFET |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| 引脚数量 | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| 工作温度范围 | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |