BSZ031NE2LS5ATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ031NE2LS5ATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ031NE2LS5ATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ031NE2LS5ATMA1 | BSZ0901NSIATMA1 |
| Technology / Platform | OptiMOS 5 25V/30V N-channel trench MOSFET | β |
| Drain-Source Voltage (VDS) max | 25 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Continuous Drain Current (ID) at Ta=25C | 19 A | 25 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10 V | 3.1 mOhm | β |
| RDS(on) typical @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 30 W | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Series | β | OptiMOS 25V |
| Technology | β | OptiMOS trench N-channel MOSFET |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET range) |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |