BSZ130N03LSGATMA1 vs IPD30N08S2L21ATMA1 对比
详细并排对比 BSZ130N03LSGATMA1 出自 Infineon 和 IPD30N08S2L21ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ130N03LSGATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.41 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| 连续漏极电流（TC=25°C） | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| 封装 | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TO252-3-11 (DPAK-2) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | -55C to +175C |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Series | — | OptiMOS |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Maximum Junction Temperature | — | +175C |
| 引脚数量 | — | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | — | AEC-Q101 qualified |