BSZ215CHXTMA1 vs BSZ0901NSIATMA1 对比
详细并排对比 BSZ215CHXTMA1 出自 Infineon 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ215CHXTMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS 25V |
| FET Type | N-Channel and P-Channel Complementary | N-Channel |
| Drain-Source Voltage (Vds) | 20 V | — |
| Continuous Drain Current - N-channel (Id) | 5.1 A | — |
| Continuous Drain Current - P-channel (Id) | 3.2 A | — |
| Power Dissipation (Pd) | 2.5 W | — |
| On-State Resistance - N-channel max (Rds(on)) | [DATA_NEEDED: N-channel Rds(on)] | — |
| On-State Resistance - P-channel max (Rds(on)) | [DATA_NEEDED: P-channel Rds(on)] | — |
| Technology | OptiMOS (enhancement mode) | OptiMOS trench N-channel MOSFET |
| 封装 | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (100% lead-free) | — |
| Avalanche Rated | Yes | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| 引脚数量 | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |