BSZ215CHXTMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ215CHXTMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ215CHXTMA1
BSZ215CHXTMA1 - 20V N+P Complementary MOSFET | Infineon
BSZ215CHXTMA1 β Active
Specification Comparison
| Parameter | BSZ215CHXTMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | OptiMOS 25V |
| FET Type | N-Channel and P-Channel Complementary | N-Channel |
| Drain-Source Voltage (Vds) | 20 V | β |
| Continuous Drain Current - N-channel (Id) | 5.1 A | β |
| Continuous Drain Current - P-channel (Id) | 3.2 A | β |
| Power Dissipation (Pd) | 2.5 W | β |
| On-State Resistance - N-channel max (Rds(on)) | [DATA_NEEDED: N-channel Rds(on)] | β |
| On-State Resistance - P-channel max (Rds(on)) | [DATA_NEEDED: P-channel Rds(on)] | β |
| Technology | OptiMOS (enhancement mode) | OptiMOS trench N-channel MOSFET |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (100% lead-free) | β |
| Avalanche Rated | Yes | β |
| Part Number | β | BSZ0901NSIATMA1 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |