BTS3028SDLATMA1 vs BSS316NH6327XTSA1 对比

详细并排对比 BTS3028SDLATMA1 出自 Infineon 和 BSS316NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BTS3028SDLATMA1 BTS3028SDLATMA1 - 5A Low-Side Smart Switch | Infineon

BTS3028SDLATMA1 - 5A Low-Side Smart Switch | Infineon

BTS3028SDLATMA1 ✓ 量产中
Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 ✓ 量产中

规格对比

参数 BTS3028SDLATMA1 BSS316NH6327XTSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $0.13
Product Type Smart Low-Side Power Switch —
拓扑 1:1 N-Channel, Single Channel —
Load Supply Voltage Range 2 V to 10 V —
Continuous Drain Current (I_D) 5 A —
On-State Resistance (R_DS(on)) 28 mΩ (typ at 25 °C, V_IN = 5 V) —
Overvoltage Clamp Yes (integrated) —
Overtemperature Shutdown Yes (integrated) —
Current Limitation Yes (integrated) —
ESD Protection Yes (integrated) —
STATUS Feedback Pin Yes —
工作温度范围 -40 °C to +150 °C (T_j) —
封装 PG-TO252-3-11 (DPAK, 3-pin + tab) PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
RoHS 状态 Compliant Compliant
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS 2 (Trench)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 1.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance RDS(on) max — 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ — 2 V at ID=3.7 uA
Total Gate Charge (Qg) — 600 pC at VGS=5 V
Input Capacitance (Ciss) — 94 pF at VDS=15 V
Output Capacitance (Coss) — [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C — 500 mW
工作结温范围 — -55 C to +150 C
Lead Plating — Pb-free (Matte Tin)
MSL 等级 — MSL1 (per JEDEC J-STD-020)

数据手册与资源

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