BTS3028SDLATMA1 vs BSS316NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BTS3028SDLATMA1 von Infineon und BSS316NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BTS3028SDLATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,05 | $0,13 |
| Product Type | Smart Low-Side Power Switch | — |
| Topologie | 1:1 N-Channel, Single Channel | — |
| Load Supply Voltage Range | 2 V to 10 V | — |
| Continuous Drain Current (I_D) | 5 A | — |
| On-State Resistance (R_DS(on)) | 28 mΩ (typ at 25 °C, V_IN = 5 V) | — |
| Overvoltage Clamp | Yes (integrated) | — |
| Overtemperature Shutdown | Yes (integrated) | — |
| Current Limitation | Yes (integrated) | — |
| ESD Protection | Yes (integrated) | — |
| STATUS Feedback Pin | Yes | — |
| Betriebstemperaturbereich | -40 °C to +150 °C (T_j) | — |
| Gehäuse | PG-TO252-3-11 (DPAK, 3-pin + tab) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| MSL-Level | — | MSL1 (per JEDEC J-STD-020) |