BTS3028SDLATMA1 vs BSS316NH6327XTSA1 비교
다음의 상세 나란히 비교: BTS3028SDLATMA1 제조: Infineon 및 BSS316NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BTS3028SDLATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Power MOSFET Drivers | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.05 | $0.13 |
| Product Type | Smart Low-Side Power Switch | — |
| 토폴로지 | 1:1 N-Channel, Single Channel | — |
| Load Supply Voltage Range | 2 V to 10 V | — |
| Continuous Drain Current (I_D) | 5 A | — |
| On-State Resistance (R_DS(on)) | 28 mΩ (typ at 25 °C, V_IN = 5 V) | — |
| Overvoltage Clamp | Yes (integrated) | — |
| Overtemperature Shutdown | Yes (integrated) | — |
| Current Limitation | Yes (integrated) | — |
| ESD Protection | Yes (integrated) | — |
| STATUS Feedback Pin | Yes | — |
| 동작 온도 범위 | -40 °C to +150 °C (T_j) | — |
| 패키지 | PG-TO252-3-11 (DPAK, 3-pin + tab) | PG-SOT23 (SOT-23-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| RoHS 상태 | Compliant | Compliant |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 1.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| 동작 접합 온도 범위 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| MSL 레벨 | — | MSL1 (per JEDEC J-STD-020) |