CGD65B130SH2 vs CGD65B130S2 对比
详细并排对比 CGD65B130SH2 出自 Cambridge GaN Devices 和 CGD65B130S2 出自 Cambridge GaN Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CGD65B130SH2 | CGD65B130S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.74 | $2.10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 | — |
| 晶体管类型 | N-Channel GaN HEMT (Enhancement Mode) | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A | — |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ | — |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ | — |
| On-Resistance Range (datasheet) | 130 to 350 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V | — |
| Total Gate Charge Qg | 1.9 nC | — |
| Technology | GaN-on-silicon (ICeGaN®) | — |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit | — |
| 封装 | 8-DFN (5x6 mm), Surface Mount | 8-DFN 5x6 mm with exposed thermal pad |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) | — |
| Compliance / RoHS | Compliant (per DigiKey listing) | — |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Continuous Drain Current (ID) | — | 12 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero) |
| 工作温度 | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| MSL 等级 | — | MSL 1 (per JEDEC J-STD-020) |
| RoHS 状态 | — | Compliant |
| Substrate Technology | — | GaN-on-silicon |