CGD65B130SH2 vs CGD65B130S2 Comparación
Comparación detallada lado a lado de CGD65B130SH2 por Cambridge GaN Devices y CGD65B130S2 por Cambridge GaN Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Cambridge GaN Devices
CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
CGD65B130SH2 ✓ ActivoCambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ ActivoComparación de especificaciones
| Parámetro | CGD65B130SH2 | CGD65B130S2 |
|---|---|---|
| Marca | Cambridge GaN Devices | Cambridge GaN Devices |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,74 | $2,10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 | — |
| Tipo de transistor | N-Channel GaN HEMT (Enhancement Mode) | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A | — |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ | — |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ | — |
| On-Resistance Range (datasheet) | 130 to 350 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V | — |
| Total Gate Charge Qg | 1.9 nC | — |
| Technology | GaN-on-silicon (ICeGaN®) | — |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit | — |
| Encapsulado | 8-DFN (5x6 mm), Surface Mount | 8-DFN 5x6 mm with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) | — |
| Compliance / RoHS | Compliant (per DigiKey listing) | — |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Continuous Drain Current (ID) | — | 12 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero) |
| Temperatura de funcionamiento | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Nivel MSL | — | MSL 1 (per JEDEC J-STD-020) |
| Estado RoHS | — | Compliant |
| Substrate Technology | — | GaN-on-silicon |