CY14V104LA-BA25XI vs CY14V104LA 对比

详细并排对比 CY14V104LA-BA25XI 出自 Infineon 和 CY14V104LA 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
CY14V104LA-BA25XI CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon

CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon

CY14V104LA-BA25XI ✓ 量产中

规格对比

参数 CY14V104LA-BA25XI CY14V104LA
品牌 Infineon Infineon
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.72 $10.85
存储器类型 nvSRAM (Non-Volatile SRAM) Non-Volatile SRAM (nvSRAM)
存储容量 4 Mbit —
存储组织 512K x 8 / 256K x 16 —
接口 Parallel Parallel (asynchronous SRAM-compatible)
Access Time 25 ns 25 ns (BA25) or 45 ns (BA45)
电源电压 3 V (typical 3.3 V) —
工作温度 -40C to +85C -40 C to +85 C (industrial)
STORE Cycle Endurance 1,000,000 cycles minimum —
Data Retention 20 years [DATA_NEEDED: retention years]
SRAM Read/Write Endurance Unlimited (infinite SRAM cycles) —
Address Bus (x8 mode) A0 to A18 —
Address Bus (x16 mode) A0 to A17 with BHE/BLE byte enables —
Non-Volatile Functions Automatic STORE on power-down, RECALL on power-up, software STORE/RECALL, HSB pin —
封装 48-FBGA (6 x 10 mm, 1.20 mm height) 48-FBGA (6 x 10 x 1.20 mm)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Grade Industrial —
Density — 4 Mbit (512 K x 8 / 256 K x 16)
Operating Voltage — 3.3 V (3.0 V min, 3.6 V max)
Bus Width — x8 / x16 selectable (BYTE pin)
STORE Time (typical) — [DATA_NEEDED: STORE time in ms]
RECALL Time (typical) — [DATA_NEEDED: RECALL time in ms]
Active Supply Current (Icc) — [DATA_NEEDED: Icc active mA]
Standby Current (Isb) — [DATA_NEEDED: Isb uA]
Hardware STORE Pin — HSB (active low)
Auto STORE on VCC Drop — Yes (integrated VCc monitor)
Read/Write Endurance — Unlimited (SRAM side)

数据手册与资源

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