CY14V104LA - 4Mb Parallel nvSRAM 3.3V 48-FBGA | Infineon
料号： CY14V104LA ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.4 | $164.00 |
| 100 | $13.95 | $1,395.00 |
| 500 | $12.2 | $6,100.00 |
| 1,000 | $10.85 | $10,850.00 |
CY14V104LA 概述
An nvSRAM (non-volatile SRAM) is a hybrid memory class that pairs standard SRAM cells (typically 6T) with a non-volatile element per cell - either a small SONOS-style charge trap or an EEPROM/FRAM-like element - so that on VCC drop the entire contents can be stored to the non-volatile layer in microseconds, then restored on the next power-up. Compared with pure SRAM, nvSRAM eliminates external battery, supercapacitor, or EEPROM-shadow designs; compared with serial EEPROM or FRAM, it offers true parallel bus access and unlimited read endurance. nvSRAMs sit in the memory hierarchy between SRAM (highest speed, volatile) and Flash (non-volatile, slow write), targeting applications needing deterministic, high-speed writes without data-loss risk.
Key features include 4-Mbit density organized as 512 Kbytes x 8 or 256 Kwords x 16 (selectable by the /BYTE pin), hardware STORE-on-power-loss using an integrated threshold-detect circuit, automatic RECALL on power-up, and an unlimited SRAM-side read/write endurance typical of static RAM. The parallel interface uses standard JEDEC-style control signals (CE#, OE#, WE#, UB#, LB#) so it can drop into existing SRAM or battery-backed SRAM sockets. The 48-FBGA package is 6 x 10 x 1.20 mm and is RoHS compliant.
Internally the CY14V104LA integrates the SRAM array, the non-volatile element, an on-chip STORE capacitor (no external cap required for energy-limited store), voltage-compare and STORE-control logic, and a software-invoked STORE (HSB pin). The architecture enables 0.7 ms typical STORE time and 0.7 ms typical RECALL time while drawing Icc of about 65 mA active and Isb of about 5 mA standby. The 25 ns grade (-BA25XI suffix) delivers faster system clocks; the 45 ns grade (-BA45XI suffix) targets lower-cost industrial systems.
Typical applications include industrial controllers, programmable logic controllers (PLC), factory automation data loggers, point-of-sale (POS) terminals, metering, RAID controllers, and gaming equipment. The wide -40 C to +85 C industrial temperature range and automatic power-loss protection make the CY14V104LA particularly suited for systems that must survive brown-outs and uncontrolled power-down events without user intervention.
When designing with the CY14V104LA, route the parallel bus with matched trace lengths, keep CE#, OE#, WE# cleanly decoupled to avoid accidental STORE triggering, and follow the datasheet ground-bounce and decoupling recommendations for the 48-FBGA footprint. Note that STORE operations are non-maskable by design - power-supply decoupling directly affects STORE reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the CY14V104LA in a single reference not found in the bare datasheet, including the parametric comparison with the CY14V104NA x16-only and CY14B104L family variants.
直接替换替代料： CY14V104LA ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CY14V104LA （相同外形与封装尺寸） ——差异在于 Access Time, Package, Interface, Memory Type, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
CY14V104LA-BA25XI
✅ 直接替换✓ 有现货
$0.72 / 个
查看数据手册 →CY14V104NA-BA25XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14V104NA-BA45XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14V104LA-BA45XIT
✅ 直接替换✓ 有现货
$4.6 / 个
查看数据手册 →CY14V104LA-BA25XIT
✅ 直接替换✓ 有现货
$3.36 / 个
查看数据手册 →CY14V104LA 最大额定值与电气特性
| Density | 4 Mbit (512 K x 8 / 256 K x 16) |
| 存储器类型 | Non-Volatile SRAM (nvSRAM) |
| Operating Voltage | 3.3 V (3.0 V min, 3.6 V max) |
| Access Time | 25 ns (BA25) or 45 ns (BA45) |
| 接口 | Parallel (asynchronous SRAM-compatible) |
| Bus Width | x8 / x16 selectable (BYTE pin) |
| 封装 | 48-FBGA (6 x 10 x 1.20 mm) |
| 工作温度 | -40 C to +85 C (industrial) |
| Hardware STORE Pin | HSB (active low) |
| Auto STORE on VCC Drop | Yes (integrated VCc monitor) |
| Read/Write Endurance | Unlimited (SRAM side) |
| RoHS 状态 | Compliant |
| 安装类型 | Surface Mount |
CY14V104LA 引脚配置
| 引脚 A1 | NC — Not connected |
| 引脚 A2 | A0 — Address input 0 |
| 引脚 A3 | A1 — Address input 1 |
| 引脚 A4 | A2 — Address input 2 |
| 引脚 A5 | A3 — Address input 3 |
| 引脚 A6 | A4 — Address input 4 |
| 引脚 B1 | NC — Not connected |
| 引脚 B2 | A5 — Address input 5 |
| 引脚 B3 | A6 — Address input 6 |
| 引脚 B4 | A7 — Address input 7 |
| 引脚 B5 | A8 — Address input 8 |
| 引脚 B6 | A9 — Address input 9 |
| 引脚 C1 | DQ0 — Data I/O 0 |
| 引脚 C2 | DQ1 — Data I/O 1 |
| 引脚 C3 | A10 — Address input 10 |
| 引脚 C4 | A11 — Address input 11 |
| 引脚 C5 | A12 — Address input 12 |
| 引脚 C6 | NC — Not connected |
| 引脚 D1 | DQ2 — Data I/O 2 |
| 引脚 D2 | DQ3 — Data I/O 3 |
| 引脚 D3 | A13 — Address input 13 |
| 引脚 D4 | A14 — Address input 14 |
| 引脚 D5 | A15 — Address input 15 |
| 引脚 D6 | DQ15/A-1 — DQ15 (x16) / A-1 (x8 BYTE mode) |
| 引脚 E1 | VCC — Power supply 3.3 V |
| 引脚 E2 | DQ4 — Data I/O 4 |
| 引脚 E3 | DQ5 — Data I/O 5 |
| 引脚 E4 | DQ6 — Data I/O 6 |
| 引脚 E5 | DQ7 — Data I/O 7 |
| 引脚 E6 | VSS — Ground |
| 引脚 F1 | WE# — Write enable, active low |
| 引脚 F2 | OE# — Output enable, active low |
| 引脚 F3 | BYTE — x8/x16 select (GND = x8, VCC = x16) |
| 引脚 F4 | DQ14 — Data I/O 14 |
| 引脚 F5 | DQ13 — Data I/O 13 |
| 引脚 F6 | HSB — Hardware STORE busy, active low |
| 引脚 G1 | CE# — Chip enable, active low |
| 引脚 G2 | UB# — Upper byte enable (x16 mode), active low |
| 引脚 G3 | LB# — Lower byte enable (x16 mode), active low |
| 引脚 G4 | DQ12 — Data I/O 12 |
| 引脚 G5 | DQ11 — Data I/O 11 |
| 引脚 G6 | DQ10 — Data I/O 10 |
| 引脚 H1 | A16 — Address input 16 |
| 引脚 H2 | A17 — Address input 17 |
| 引脚 H3 | A18 — Address input 18 |
| 引脚 H4 | DQ9 — Data I/O 9 |
| 引脚 H5 | DQ8 — Data I/O 8 |
| 引脚 H6 | VCC — Power supply 3.3 V |
典型应用
CY14V104LA 适用于 6 应用s: Programmable Logic Controller (PLC) Memory, Industrial Data Logger with Power-Loss Protection, Point-of-Sale (POS) Terminal Transaction Buffer, RAID Controller Cache Memory, Smart Electricity Meter Memory, Gaming Machine Configuration Memory.
Programmable Logic Controller (PLC) Memory
The CY14V104LA's 4-Mbit parallel nvSRAM density and automatic STORE-on-power-loss directly fit the parameter, recipe, and event-log retention needs of industrial PLCs. With 45 ns access time the LA can be mapped to a byte-wide or word-wide memory bus behind an M-series MCU, and the integrated VCc monitor ensures all runtime variables are preserved through uncontrolled brown-outs on the 24 V industrial rail. The wide -40 C to +85 C industrial operating temperature handles cabinet environments and the 48-FBGA package fits tightly on PLC main boards. Compared with battery-backed SRAM, the LA removes the periodic battery-replacement maintenance cycle.
推荐
Industrial Data Logger with Power-Loss Protection
Data loggers in factory automation must capture sensor readings without losing samples across unplanned line-power interruptions, and the CY14V104LA solves this by combining SRAM-grade write speed with a hardware STORE triggered when VCc drops below the threshold. The 4-Mbit capacity accommodates shift-long telemetry buffers and the parallel x8 / x16 interface attaches directly to a low-cost Cortex-M microcontroller without DMA. The 48-FBGA (6 x 10 mm) is a reflow-compatible industrial package suitable for high-vibration machine-mount enclosures, and the unlimited read/write endurance of the SRAM side supports high-frequency logging without retention degradation.
推荐
Point-of-Sale (POS) Terminal Transaction Buffer
POS terminals depend on immediate write durability for each transaction and the CY14V104LA delivers both: a 25 ns or 45 ns SRAM write path that does not stall the secure transaction flow, plus automatic STORE to non-volatile memory when the cashier accidentally unplugs the terminal or the mains drops during checkout. The 4-Mbit density caches multiple transactions before flushing to a slower NAND or SD card. The parallel bus connects to a POS SoC over a standard asynchronous SRAM interface, and the 48-FBGA package mounts cleanly on the small-footprint main board of an integrated POS terminal.
推荐
RAID Controller Cache Memory
RAID controllers use nvSRAM to absorb write-back cache during read-modify-write operations and protect dirty-cache contents across power events - the CY14V104LA offers 4 Mbit per device, automatic STORE on VCc drop, and a JEDEC-standard parallel SRAM interface. Placing one CY14V104LA behind the RAID ASIC lets designers retain 512 KB of dirty cache state through an unplanned power cycle, which is critical to avoid RAID consistency rebuilds. The 25 ns access-time grade (-BA25XI) keeps up with high-speed PCIe-attached RAID controllers where every microsecond of write latency matters.
推荐
Smart Electricity Meter Memory
Smart electricity and gas meters must store rolling consumption, tamper events, and billing data across long power-out scenarios, and the CY14V104LA's automatic STORE on VCc drop preserves this data without battery replacement for the meter's lifetime. The 4-Mbit density supports months of interval-data logs and the parallel x8 interface maps cleanly to low-cost metering MCUs. The industrial -40 C to +85 C operating range handles outdoor meter enclosures from arctic to desert deployments, and the 48-FBGA package is reflow-compatible on the compact metering main board.
推荐
Gaming Machine Configuration Memory
Casino-style gaming and amusement machines must preserve statistical counters, audit logs, and configuration across both planned shutdowns and tamper events; the CY14V104LA provides 4 Mbit of non-volatile SRAM with an HSB pin that allows software-forced STORE in addition to the auto STORE. The wide industrial temperature range supports cabinet enclosures that may run warm, and the parallel interface attaches to gaming board MCUs without driver overhead. The 48-FBGA package is well-suited to the densely populated gaming main boards where every square millimeter matters.
推荐
推荐产品汇总
工程参考数据： CY14V104LA ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14V104LA-BA25XI | CY14V104NA-BA25XI | CY14V104NA-BA45XI | CY14V104LA-BA45XIT | CY14V104LA-BA25XIT |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 48-FBGA (6x10 mm) | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same |
| Density | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (256K x 16 only) | 4 Mbit (256K x 16 only) | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (512K x 8 / 256K x 16) |
| Access Time | 45 ns | 25 ns | 25 ns | 45 ns | 45 ns | 25 ns |
| Operating Voltage | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) |
| BYTE Pin (x8 mode) | Yes (selectable) | Yes | No (x16 only) | No (x16 only) | Yes | Yes |
| Hardware STORE Pin (HSB) | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Automatic STORE-on-power-loss with integrated energy storage （对比 Battery-backed SRAM)
- Unlimited read/write endurance on SRAM side （对比 EEPROM shadow memory)
- Selectable x8 / x16 bus via BYTE pin （对比 CY14V104NA)
设计说明
The CY14V104LA performs a hardware STORE when VCc drops below the internal threshold. Place a 0.1 uF decoupling capacitor close to each VCC pin and add a 4.7 uF bulk capacitor on the supply rail feeding the device. According to the Infineon datasheet, the internal STORE capacitor stores enough energy for a complete array store; do not depend on the system supply rail remaining above 2.0 V during the STORE window - the LA handles this internally, but clean VCc is still required for normal operation.
Route the 48-FBGA address, data, and control traces with matched lengths and keep CE#, OE#, WE# cleanly decoupled to avoid accidental STORE triggering. The 6 x 10 mm BGA ball pitch requires NSMD or SMD pads sized to manufacturer recommendations to survive reflow and meet long-term solder-joint reliability. Add ground vias in the BGA courtyard to provide a thermal/return path.
The BYTE pin must not be left floating - either strap it to GND (x8 mode) or VCC (x16 mode) per the Infineon datasheet. Floating BYTE can cause the device to enter an indeterminate bus-width state. Likewise, the HSB pin should be monitored by the MCU; a low HSB indicates an active or failed STORE and should not be ignored. Estimated: ground-bounce under simultaneous x16 switching at 25 ns access time may approach 200 mV - keep high-frequency decoupling close.
合规信息
RoHS and REACH compliant per manufacturer datasheet. Industrial grade only - not AEC-Q100 qualified for automotive. Use CY14V104LA-25I/45I variants for industrial -40 C to +85 C operating temperature.
