CY14V104LA-BA25XI vs CY14V104LA-BA25XIT 对比

详细并排对比 CY14V104LA-BA25XI 出自 Infineon 和 CY14V104LA-BA25XIT 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
CY14V104LA-BA25XI CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon

CY14V104LA-BA25XI - 4Mbit nvSRAM 25ns FBGA-48 | Infineon

CY14V104LA-BA25XI ✓ 量产中
Infineon
CY14V104LA-BA25XIT CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT ✓ 量产中

规格对比

参数 CY14V104LA-BA25XI CY14V104LA-BA25XIT
品牌 Infineon Infineon
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.72 $3.36
存储器类型 nvSRAM (Non-Volatile SRAM) nvSRAM (non-volatile SRAM)
存储容量 4 Mbit 4 Mbit
存储组织 512K x 8 / 256K x 16 512K x 8
接口 Parallel Parallel
Access Time 25 ns 25 ns
电源电压 3 V (typical 3.3 V) —
工作温度 -40C to +85C —
STORE Cycle Endurance 1,000,000 cycles minimum —
Data Retention 20 years 20 years
SRAM Read/Write Endurance Unlimited (infinite SRAM cycles) —
Address Bus (x8 mode) A0 to A18 —
Address Bus (x16 mode) A0 to A17 with BHE/BLE byte enables —
Non-Volatile Functions Automatic STORE on power-down, RECALL on power-up, software STORE/RECALL, HSB pin —
封装 48-FBGA (6 x 10 mm, 1.20 mm height) 48-FBGA (6x10 mm), TFBGA
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Grade Industrial —
Core Supply Voltage (VCC) — 3.0 V to 3.6 V
I/O Supply Voltage (VCCQ) — 1.65 V to 1.95 V
STORE Cycles — 1 million
Read/Write/RECALL Cycles — Infinite
AutoStore — Yes (external VCAP 61 uF to 180 uF)
Non-volatile Technology — QuantumTrap
Temperature Grade — Industrial

数据手册与资源

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