CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon
料号： CY14V104LA-BA25XIT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.2 | $5.20 |
| 10 | $4.68 | $46.80 |
| 100 | $4.16 | $416.00 |
| 500 | $3.74 | $1,870.00 |
| 1,000 | $3.36 | $3,360.00 |
CY14V104LA-BA25XIT 概述
An nvSRAM is a static RAM that integrates a non-volatile element (QuantumTrap) into each memory cell. In the memory hierarchy it sits between standard SRAM and Flash/EEPROM: it offers SRAM-class speed and unlimited read/write endurance while retaining data without power, unlike battery-backed SRAM which requires a cell and maintenance. This makes nvSRAM a power-management-friendly memory for systems that must survive abrupt power loss.
Key features include infinite read, write, and RECALL cycles; 1 million STORE cycles to the non-volatile QuantumTrap elements; hands-off AutoStore on power-down using an external 61 uF to 180 uF VCAP capacitor; and software, HSB-pin, or automatic STORE/RECALL control. Dual-rail operation separates the 3.0 V to 3.6 V core (VCC) from a 1.65 V to 1.95 V I/O supply (VCCQ), simplifying interfacing with low-voltage processors and FPGAs.
Architecturally, each cell pairs a fast SRAM latch with a QuantumTrap non-volatile element. On power-down, data is automatically transferred to the non-volatile cells; on power-up, data is recalled back to SRAM. The parallel address/data interface with 25 ns access time supports zero-wait-state operation in embedded buses.
Typical applications include industrial PLCs and data loggers, RAID and storage controllers, networking equipment, and automotive/avionics black-box style event recorders where write endurance and instant non-volatility matter.
Design-wise, budget the VCAP capacitor carefully (61 uF to 180 uF, low leakage) since it supplies the AutoStore energy, and observe separate VCC/VCCQ power sequencing requirements.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替换替代料： CY14V104LA-BA25XIT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CY14V104LA-BA25XIT （相同外形与封装尺寸） ——差异在于 Package, Access Time, Interface, Memory Type, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
CY14V104LA-BA25XI
✅ 直接替换✓ 有现货
$0.72 / 个
查看数据手册 →CY14V104LA-BA25XIT
✅ 直接替换✓ 有现货
$3.36 / 个
查看数据手册 →CY14V104LA-BA25XIT 最大额定值与电气特性
| 存储器类型 | nvSRAM (non-volatile SRAM) |
| 存储容量 | 4 Mbit |
| 存储组织 | 512K x 8 |
| Access Time | 25 ns |
| 接口 | Parallel |
| Core Supply Voltage (VCC) | 3.0 V to 3.6 V |
| I/O Supply Voltage (VCCQ) | 1.65 V to 1.95 V |
| STORE Cycles | 1 million |
| Data Retention | 20 years |
| Read/Write/RECALL Cycles | Infinite |
| AutoStore | Yes (external VCAP 61 uF to 180 uF) |
| Non-volatile Technology | QuantumTrap |
| 封装 | 48-FBGA (6x10 mm), TFBGA |
| 安装类型 | Surface Mount |
| Temperature Grade | Industrial |
| RoHS 状态 | Compliant |
CY14V104LA-BA25XIT 48-fbga (6x10 mm), tfbga 引脚配置指南
CY14V104LA-BA25XIT（48-fbga (6x10 mm), tfbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： CY14V104LA-BA25XIT.
请参阅 数据手册 以查看完整引脚配置。
典型应用
CY14V104LA-BA25XIT 适用于 6 应用s: Industrial PLCs and Data Loggers, RAID and Storage Controllers, Networking and Telecom Equipment, Event and Black-Box Recorders, Medical Equipment Configuration Storage, Smart Meters and IoT Gateways.
Industrial PLCs and Data Loggers
Industrial programmable logic controllers and process data loggers must capture fault and process data instantly during brownouts or emergency stops. The CY14V104LA-BA25XIT fits this role precisely: its 25 ns asynchronous parallel access supports zero-wait-state logging at full bus speed, while AutoStore transfers the entire 512K x 8 array into QuantumTrap non-volatile cells automatically when VCC falls, powered by the external 61-180 uF VCAP capacitor. With infinite read/write cycles, high-frequency logging never wears the part - only the 1 million STORE cycles are consumed, and fewer than one STORE per second for a year uses under 32,000 cycles. The dual-rail design also interfaces cleanly with 1.8V industrial SoCs. Estimated: at typical logging duty cycles, non-volatile endurance lasts decades.
推荐
RAID and Storage Controllers
RAID controllers use nvSRAM as write-cache memory that must survive sudden power loss without battery backup. The CY14V104LA-BA25XIT provides 4 Mbit of battery-free write journal storage: incoming write metadata and queue state written at SRAM speed (25 ns access) are committed to QuantumTrap non-volatile elements automatically on power-down, enabling controller recovery with consistent cache state at next power-up. Unlike DRAM-with-battery schemes, there are no battery health monitoring circuits, no periodic replacement, and no lithium transport restrictions. The 1.65-1.95 V VCCQ I/O rail connects directly to modern controller ASICs, while the 3.0-3.6 V core supplies the memory array. Design consideration: firmware should periodically issue software STORE commands to bound the worst-case data-at-risk window.
推荐
Networking and Telecom Equipment
Routers, switches, and line cards need fast configuration-state and table storage that survives hot power events. The CY14V104LA-BA25XIT stores routing adjacency snapshots, configuration images, and counters with 25 ns random access, keeping control-plane CPUs out of wait states. AutoStore ensures the working copy is saved without host intervention during chassis power faults, and power-up RECALL restores state in milliseconds - far faster than reloading from serial Flash. The 48-ball FBGA (6x10 mm) footprint suits high-density line-card layouts, and industrial temperature rating supports outdoor telecom cabinets. The dual-rail I/O (1.65-1.95 V VCCQ) matches modern network processors directly, eliminating bus-transceiver logic and its associated propagation delay.
推荐
Event and Black-Box Recorders
Automotive, rail, and aerospace event recorders demand memory that captures the final moments before power interruption with certainty. The CY14V104LA-BA25XIT's AutoStore mechanism completes a full 4-Mbit non-volatile commit from the VCAP capacitor alone during power decay - no external holdup supply is required. Continuous circular-buffer writes at SRAM speed (unlimited write endurance) let the recorder log sensor streams in real time, while the 20-year retention and 1 million STORE cycle budget comfortably exceed typical service lives. The 25 ns access time supports parallel sampling buses without FIFO buffering, and the industrial temperature grade covers harsh environmental compartments. Engineers should validate power-fail timing against the VCAP sizing per the datasheet AutoStore circuit.
推荐
Medical Equipment Configuration Storage
Infusion pumps, patient monitors, and diagnostic instruments keep calibration constants, usage counters, and last-user settings in the CY14V104LA-BA25XIT. Byte-wide 25 ns access lets the main processor read settings during early boot, and writes of calibration updates complete in a single bus cycle with unlimited endurance - important for devices recalibrated frequently across years of service. Battery-free non-volatility removes a maintenance item that is critical in medical fleets: no lithium cells to schedule-replace or fail audits. The 48-ball FBGA conserves board area inside compact handheld and cart-mounted enclosures, and the 1.8 V VCCQ rail matches low-power medical SoCs. Estimated: at one calibration STORE per day, 1 million STORE cycles provide over 2,700 years of headroom.
推荐
Smart Meters and IoT Gateways
Smart energy meters and industrial IoT gateways log consumption and telemetry buffers that must persist through grid outages and brownouts. The CY14V104LA-BA25XIT writes metering events at SRAM speed with unlimited endurance, then AutoStore captures the working set on power-down using only the VCAP capacitor - ideal for meters that lose power thousands of times over a 20-year field life. The 20-year retention matches typical meter certification periods, and the 1.65-1.95 V I/O rail interfaces directly with low-power metering SoCs, minimizing standby current on battery-backed domains. The 6x10 mm FBGA fits the tight component density of metering PCBs, and the parallel bus avoids the latency and protocol overhead of serial non-volatile memories in high-frequency logging paths.
推荐
推荐产品汇总
工程参考数据： CY14V104LA-BA25XIT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14V104LA-BA25XI | CY14V104LA-BA25XIT (re-source) |
|---|---|---|---|
| Package | 48-FBGA (6x10 mm) | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same |
| Brand | Infineon (Cypress) | Infineon (Cypress) | Infineon (Cypress) |
| Density / Organization | 4 Mbit, 512K x 8 | 4 Mbit, 512K x 8 | 4 Mbit, 512K x 8 |
| Access Time | 25 ns | 25 ns | 25 ns |
| VCC / VCCQ | 3.0-3.6 V / 1.65-1.95 V | 3.0-3.6 V / 1.65-1.95 V | 3.0-3.6 V / 1.65-1.95 V |
| STORE Cycles | 1 million | 1 million | 1 million |
| Data Retention | 20 years | 20 years | 20 years |
| Delivery Format | Tape & Reel | Tray | Tape & Reel / broker stock |
| Temperature Grade | Industrial | Industrial | Industrial |
关键差异点
- Dual-rail I/O for direct 1.8V interfacing （对比 CY14V104LA-BA25XI (and legacy single-rail nvSRAM))
- Battery-free 20-year non-volatility （对比 Battery-backed SRAM solutions)
- SRAM-speed non-volatile writes （对比 Serial Flash/EEPROM)
设计说明
The VCAP capacitor is the single most critical external component: it must store enough energy to complete AutoStore when VCC collapses. Use a low-ESR, low-leakage capacitor between 61 uF and 180 uF per the Infineon product data, placed close to the VCAP ball. Never connect the VCAP node to any external circuit or use it as a general power node. Verify system power-fail detection (HSB behavior) triggers before VCC falls below the minimum STORE voltage; a supervisor such as a reset IC monitoring the 3.3V rail is recommended for noisy industrial supplies.
The 48-ball FBGA (6x10 mm) requires controlled BGA layout: follow the datasheet ball-map with dedicated VCC and VCCQ power islands, and decouple each rail with at least 0.1 uF ceramic plus bulk capacitance near the balls. Keep address/control traces length-matched within reason for 25 ns timing closure at high bus frequencies. Provide fiducials and a defined reflow profile per Infineon's BGA assembly guidelines; the 1.20 mm package height suits standard SMT reflow, not hand rework.
Two firmware pitfalls recur with nvSRAM designs. First, relying solely on AutoStore for every write leaves the worst-case power-fail window unbounded between STOREs - issue periodic software STORE commands in logging applications to bound data-at-risk, while remembering each STORE consumes one of the 1 million cycle budget. Second, ignore the dual-rail architecture at your peril: VCCQ (1.65-1.95 V) and VCC (3.0-3.6 V) must respect the datasheet sequencing requirements, or I/O latch-up can occur during mixed-rail power-up.
合规信息
Package described as ROHS COMPLIANT FBGA-48 in distributor datasheet data. Other compliance statuses not stated in provided data.
