DMT10H015LCG-7 vs BSZ0901NSIATMA1 对比

详细并排对比 DMT10H015LCG-7 出自 Diodes Incorporated 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Diodes Incorporated
DMT10H015LCG-7 DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc

DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc

DMT10H015LCG-7 ✓ 量产中

规格对比

参数 DMT10H015LCG-7 BSZ0901NSIATMA1
品牌 Diodes Incorporated Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.34
FET Type N-Channel Enhancement Mode N-Channel
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (Ta) 9.4 A —
Continuous Drain Current (Tc) 34 A —
Power Dissipation (Ta) 1 W —
封装 V-DFN3333-8 (3.3 mm x 3.3 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction, typical) —
Technology Trench MOSFET OptiMOS trench N-channel MOSFET
Channel Polarity N-Channel —
引脚数量 8 8
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
RDS(ON) at 10V VGS [DATA_NEEDED: typical on-resistance value] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Manufacturer Part Family DMT10H015LCG —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
工作温度范围 — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

数据手册与资源

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