EDB5432BEBH-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-D 对比

详细并排对比 EDB5432BEBH-1DAUT-F-D 出自 Micron Technology 和 EDB2432B4MA-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
EDB5432BEBH-1DAUT-F-D EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron

EDB5432BEBH-1DAUT-F-D ✓ 量产中
Micron Technology
EDB2432B4MA-1DAUT-F-D EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron

EDB2432B4MA-1DAUT-F-D ✓ 量产中

规格对比

参数 EDB5432BEBH-1DAUT-F-D EDB2432B4MA-1DAUT-F-D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.45 $7.43
存储器类型 Mobile LPDDR2 SDRAM Volatile Memory - DRAM
存储容量 512 Mbit 2 Gbit (64M x 32)
存储组织 16M x 32 64M x 32
Clock Frequency 533 MHz 533 MHz
Supply Voltage Range 1.14 V to 1.95 V —
Core Voltage 1.2 V (typical, LPDDR2) —
接口 Parallel Parallel
封装 134-VFBGA (10 x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
安装类型 Surface Mount Surface Mount
Temperature Grade Automotive —
Terminals 134 balls —
Terminal Form Ball (VFBGA) —
Package Shape Rectangular —
RoHS Code Yes (D suffix, lead-free) —
Part Life Cycle Code Active —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C (Automotive)
Access Time / CAS Latency [DATA_NEEDED: CAS latency] —
Standard Qty per Reel/Tray [DATA_NEEDED: packaging standard quantity] —
Technology — SDRAM - Mobile LPDDR2
Package Construction — DDP (Double-Die Package)
Marking Code — D9WVG
Part Status — Active
Lead-Free Status — Lead free (-F suffix)
Halogen-Free Status — Halogen free (-F suffix)
电源电压 — [DATA_NEEDED: VDD/VDDQ supply voltage]
Write Cycle Time - Word, Page — [DATA_NEEDED: write cycle time]

数据手册与资源

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