EDB5432BEBH-1DAUT-F-D vs EDB2432B4MA-1DAUT-F-D 비교
다음의 상세 나란히 비교: EDB5432BEBH-1DAUT-F-D 제조: Micron Technology 및 EDB2432B4MA-1DAUT-F-D 제조: Micron Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Micron Technology
EDB5432BEBH-1DAUT-F-D - 512Mb LPDDR2 DRAM 533MHz | Micron
EDB5432BEBH-1DAUT-F-D ✓ 활성Micron Technology
EDB2432B4MA-1DAUT-F-D - 2Gbit LPDDR2 SDRAM 533MHz | Micron
EDB2432B4MA-1DAUT-F-D ✓ 활성사양 비교
| 파라미터 | EDB5432BEBH-1DAUT-F-D | EDB2432B4MA-1DAUT-F-D |
|---|---|---|
| 브랜드 | Micron Technology | Micron Technology |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.45 | $7.43 |
| 메모리 유형 | Mobile LPDDR2 SDRAM | Volatile Memory - DRAM |
| 메모리 크기 | 512 Mbit | 2 Gbit (64M x 32) |
| 메모리 구성 | 16M x 32 | 64M x 32 |
| Clock Frequency | 533 MHz | 533 MHz |
| Supply Voltage Range | 1.14 V to 1.95 V | — |
| Core Voltage | 1.2 V (typical, LPDDR2) | — |
| 인터페이스 | Parallel | Parallel |
| 패키지 | 134-VFBGA (10 x 11.5 mm) | 134-VFBGA (10 x 11.5 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Temperature Grade | Automotive | — |
| Terminals | 134 balls | — |
| Terminal Form | Ball (VFBGA) | — |
| Package Shape | Rectangular | — |
| RoHS Code | Yes (D suffix, lead-free) | — |
| Part Life Cycle Code | Active | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | -40C to +125C (Automotive) |
| Access Time / CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Standard Qty per Reel/Tray | [DATA_NEEDED: packaging standard quantity] | — |
| Technology | — | SDRAM - Mobile LPDDR2 |
| Package Construction | — | DDP (Double-Die Package) |
| Marking Code | — | D9WVG |
| Part Status | — | Active |
| Lead-Free Status | — | Lead free (-F suffix) |
| Halogen-Free Status | — | Halogen free (-F suffix) |
| 공급 전압 | — | [DATA_NEEDED: VDD/VDDQ supply voltage] |
| Write Cycle Time - Word, Page | — | [DATA_NEEDED: write cycle time] |