EP1C12F256C8 vs EP1C12F256C6N 对比
详细并排对比 EP1C12F256C8 出自 Intel 和 EP1C12F256C6N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EP1C12F256C8 | EP1C12F256C6N |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 最后采购期 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $35.20 | $51.90 |
| Series | Cyclone | — |
| Family | Cyclone I | Cyclone® |
| Logic Elements (LE) | 12,060 | — |
| Total RAM Bits | 239,616 | — |
| Number of LABs/CLBs | 1,206 | — |
| Number of Logic Elements/Cells | 12,060 | — |
| Number of I/O | 185 | — |
| Number of PLLs | 2 | — |
| Total Memory Bits | 239,616 | — |
| 封装 / 外壳 | 256-BGA (FBGA) | — |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度 | 0°C to +85°C (commercial grade) | 0 °C to +85 °C (commercial) |
| Core Voltage | 1.5 V | — |
| I/O Voltage Range | 1.5 V to 3.3 V | — |
| Supplier Device Package | 256-FBGA (17x17 mm) | — |
| Process Technology | 130 nm SRAM | 0.13 µm SRAM |
| Configuration Method | Passive Serial / Active Serial / JTAG | Serial (EPCS) / JTAG |
| Logic Elements (LEs) | — | 12,060 |
| Logic Array Blocks (LABs) | — | 1,206 |
| Embedded Memory Bits | — | 239,616 bits |
| M4K RAM Blocks | — | 52 |
| Embedded 18x18 Multipliers | — | Yes |
| PLLs | — | 2 |
| Maximum User I/O | — | 185 |
| User I/O Banks | — | [DATA_NEEDED: number of user I/O banks] |
| Core Voltage (VCCINT) | — | 1.5 V |
| I/O Voltage (VCCIO) | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) |
| 封装 | — | 256-ball FBGA (F256) |
| Speed Grade | — | 6 |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |