EP4CE15F23C8N vs EP4CE15U14A7N 对比

详细并排对比 EP4CE15F23C8N 出自 Intel 和 EP4CE15U14A7N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 EP4CE15F23C8N EP4CE15U14A7N
品牌 Intel Intel
分类 FPGA & CPLD FPGA & CPLD
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $33.10 $43.50
Series Cyclone IV E —
Logic Elements 15,408 —
Embedded Memory Bits 516,096 bits (63 KBytes) —
Embedded Multipliers (18x18) 343 —
General-purpose PLLs 4 —
Maximum User I/O Pins 343 —
封装 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) 256-ball UBGA (Ultra-FineLine BGA)
Process Technology 60 nm low-leakage CMOS —
Core Voltage (VCCINT) 1.0 V to 1.2 V —
I/O Bank Voltage (VCCIO) 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
工作温度 0C to 85C (Commercial) [DATA_NEEDED: operating temperature range]
Speed Grade C8 (commercial, 8 ns internal timing) 7
Configuration Modes AS / PS / JTAG / FPP JTAG, AS, AP, PS
安装类型 Surface Mount (BGA) —
MSL 等级 MSL3 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant (per distributor listings)
Hard IP Blocks PCIe Gen1 root port, external memory interface —
Embedded Memory Type M9K (9 Kbit each) —
Family — Cyclone IV E
Logic Elements (LE) — 15,408
Total Memory Bits — 516,096 bits
Embedded 18x18 Multipliers — 56
General-Purpose PLLs — 4
Maximum User I/Os — 165
Core Voltage — 1.2 V
Process Node — 60 nm low-power
Bitstream Encryption — AES-128 (security-enhanced variant)
External Memory Support — DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II

数据手册与资源

浏览全部产品 创建 BOM 获取报价