H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-VKI 对比

详细并排对比 H5AN4G8NBJR-UHCR 出自 SK hynix 和 H5AN4G8NBJR-VKI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 量产中
SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ 量产中

规格对比

参数 H5AN4G8NBJR-UHCR H5AN4G8NBJR-VKI
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.18 $1.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gb
存储组织 512M x 8 512M x 8
Speed Grade UH (DDR4-2400 class, PC2400) V (2666)
电源电压 1.2 V (VDD) 1.2 V
接口 DDR4 SSTL12 —
Internal Prefetch 8n —
封装 78-ball FBGA (11 mm x 7.5 mm) FBGA-78
安装类型 Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) —
Lead Free Yes —
无卤 Yes —
RoHS 状态 Compliant [DATA_NEEDED: RoHS Status]
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] [DATA_NEEDED: Refresh specification]
CAS 延迟 [DATA_NEEDED: CL value for UH grade] [DATA_NEEDED: CAS Latency]
数据速率 — 2666 Mbps
I/O Voltage — 1.2 V (SSTL12)
Temperature Grade — Industrial (I suffix)
Architecture — CMOS, 8n prefetch, bank groups
Termination — On-Die Termination (ODT)
DBI Support — Yes (Data Bus Inversion / DM)
工作温度 — [DATA_NEEDED: Operating Temperature]

数据手册与资源

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