H5AN8G4NAFR-RDC vs H5AN8G6NAFR-RDC 对比

详细并排对比 H5AN8G4NAFR-RDC 出自 SK hynix 和 H5AN8G6NAFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-RDC H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC ✓ 量产中
SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 量产中

规格对比

参数 H5AN8G4NAFR-RDC H5AN8G6NAFR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.30 $3.05
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8Gb —
存储组织 1G x 4 512M x 16
Supply Voltage (VDD) 1.2 V —
封装 FBGA-78 —
Data Rate Class [DATA_NEEDED: exact -RDC speed bin MT/s] —
CAS Latency (CL) [DATA_NEEDED: CL for -RDC bin] —
接口 Synchronous, differential clock CK_t/CK_c DDR4 (JEDEC-standard)
Bank Architecture DDR4 bank-group architecture —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (Lead-Free) Compliant (Lead-Free & Halogen-Free)
无卤 Yes —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Refresh Self-refresh and auto-refresh per DDR4 SDRAM standard —
Manufacturer SK hynix —
Datasheet Revision Rev. 1.2 / Jul. 2017 —
Memory Density — 8 Gb
电源电压 — 1.2 V
Access Mode — Multi Bank Page Burst
Package Code — TFBGA
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing)
Technology — CMOS
Speed Grade — -RDC (see datasheet for bin timing)
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Max Clock Rate — [DATA_NEEDED: max clock rate for -RDC bin]

数据手册与资源

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