H5AN8G4NAFR-RDC vs MT40A1G8AG-062E 对比

详细并排对比 H5AN8G4NAFR-RDC 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-RDC H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC - 8Gb DDR4 SDRAM x4 1.2V | SK hynix

H5AN8G4NAFR-RDC ✓ 量产中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中

规格对比

参数 H5AN8G4NAFR-RDC MT40A1G8AG-062E
品牌 SK hynix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.30 $3.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8Gb —
存储组织 1G x 4 1G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
封装 FBGA-78 78-FBGA (7.5 x 11 mm)
Data Rate Class [DATA_NEEDED: exact -RDC speed bin MT/s] —
CAS Latency (CL) [DATA_NEEDED: CL for -RDC bin] —
接口 Synchronous, differential clock CK_t/CK_c Parallel
Bank Architecture DDR4 bank-group architecture —
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 Compliant (Lead-Free) [DATA_NEEDED: RoHS status]
无卤 Yes —
工作温度 [DATA_NEEDED: operating temperature range] —
Refresh Self-refresh and auto-refresh per DDR4 SDRAM standard —
Manufacturer SK hynix —
Datasheet Revision Rev. 1.2 / Jul. 2017 —
存储容量 — 8 Gbit
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

数据手册与资源

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