H5AN8G4NAFR-VKC vs H5AN8G8NAFR-VKC 对比
详细并排对比 H5AN8G4NAFR-VKC 出自 SK hynix 和 H5AN8G8NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G4NAFR-VKC | H5AN8G8NAFR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.98 | $4.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 存储组织 | 2G x 4 | 1G x 8 |
| 数据速率 | 2666 Mbps per pin (DDR4-2666) | — |
| CAS Latency (CL) | 19 (CL19, speed bin VK) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封装 | 78-ball FBGA (PBGA78) | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Application | Main memory requiring large density and high bandwidth | — |
| Datasheet Revision | Rev. 1.2 (Jul. 2017) | — |
| 工作温度 | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| 接口 | — | SSTL12 |
| Burst Length | — | 8 (BL8) |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |