H5AN8G4NCJR-XXC vs IS43TR16256AL-125KBL 对比

详细并排对比 H5AN8G4NCJR-xxC 出自 SK hynix 和 IS43TR16256AL-125KBL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NCJR-xxC H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix

H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix

H5AN8G4NCJR-xxC ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ 量产中

规格对比

参数 H5AN8G4NCJR-xxC IS43TR16256AL-125KBL
品牌 SK hynix ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.50 $5.60
存储器类型 DDR4 SDRAM SDRAM - DDR3L
Density 8Gb —
存储组织 x4 (H5AN8G4NCJR) —
电源电压 1.2V 1.35V (backward compatible to 1.5V)
数据速率 [DATA_NEEDED: speed grade from xxC suffix] 1600 Mbps
封装 FBGA 96-TWBGA (9x13mm)
工作温度 [DATA_NEEDED: operating temperature range] 0°C ~ 95°C
RoHS Compliant —
Lead-Free Yes Yes
无卤 Yes —
安装类型 Surface Mount Surface Mount
Prefetch 8-bit —
Burst Length 8 (BL8) —
Refresh Auto-refresh and self-refresh —
On-Die Termination Yes —
存储容量 — 4Gbit (256M x 16)
接口 — Parallel
Clock Frequency — 800 MHz
Access Time — 20 ns
Memory Format — DRAM
Technology — SDRAM - DDR3L
RoHS 状态 — Compliant
Number of Terminals — 96

数据手册与资源

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