H5AN8G6NAFR-VKC vs H5AN8G4NAFR-RDC 对比
详细并排对比 H5AN8G6NAFR-VKC 出自 SK hynix 和 H5AN8G4NAFR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NAFR-VKC | H5AN8G4NAFR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.25 | $2.30 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| 存储组织 | 512M x 16 | 1G x 4 |
| Core Supply Voltage | 1.2 V | — |
| Technology | CMOS | — |
| 封装 | FBGA-96 (PBGA96) | FBGA-78 |
| Speed Grade | -VKC (DDR4-2666 class, per SK Hynix part numbering) | — |
| Data Rate Class | Up to 2666 MT/s (per -VKC speed code) | [DATA_NEEDED: exact -RDC speed bin MT/s] |
| Family | H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| RoHS 状态 | Lead-Free & Halogen-Free, RoHS Compliant | Compliant (Lead-Free) |
| Application | Main memory (high density, high bandwidth) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh mode specification] | Self-refresh and auto-refresh per DDR4 SDRAM standard |
| CAS 延迟 | [DATA_NEEDED: CAS latency for -VKC bin] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| CAS Latency (CL) | — | [DATA_NEEDED: CL for -RDC bin] |
| 接口 | — | Synchronous, differential clock CK_t/CK_c |
| Bank Architecture | — | DDR4 bank-group architecture |
| 无卤 | — | Yes |
| Manufacturer | — | SK hynix |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |