H5AN8G6NDJR-XNC vs K4A8G165WC-BCRC 对比
详细并排对比 H5AN8G6NDJR-XNC 出自 SK hynix 和 K4A8G165WC-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR-XNC | K4A8G165WC-BCRC |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.68 | $23.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| 数据速率 | 3200 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V (1.14V to 1.26V) |
| 封装 | FBGA-96 (13x7.5 mm) | 96-ball FBGA (9mm x 13mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| VPP Voltage | — | 2.5 V |
| 工作温度 | — | 0°C to +95°C (case) |
| 接口 | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS 延迟 | — | Programmable (e.g., 16, 17, 18) |
| Refresh | — | Temperature-compensated self-refresh (TCSR) |
| 安装类型 | — | Surface Mount |