H5AN8G6NDJR-XNC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-XNC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x16 | — |
| Data Rate | 3200 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | 1.2 V (1.14V to 1.26V) |
| Package | FBGA-96 (13x7.5 mm) | 96-ball FBGA (9mm x 13mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| VPP Voltage | — | 2.5 V |
| Operating Temperature | — | 0°C to +95°C (case) |
| Interface | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS Latency | — | Programmable (e.g., 16, 17, 18) |
| Refresh | — | Temperature-compensated self-refresh (TCSR) |
| Mounting Type | — | Surface Mount |