MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
料号： MT40A1G8WE-075E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $18.23 | $18.23 |
| 10 | $16.5 | $165.00 |
| 100 | $14.8 | $1,480.00 |
| 500 | $13.2 | $6,600.00 |
| 1,000 | $11.9 | $11,900.00 |
MT40A1G8WE-075E 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power than its predecessors. It uses a 1.2V supply (VDD and VDDQ) with a separate 2.5V VPP for wordline boost, and features on-die termination (ODT), internal VREFDQ generation, and pseudo-open-drain I/O. DDR4 achieves data rates up to 3200 MT/s, with the -075E speed grade indicating 2666 MT/s operation.
Key features include a refresh time of 8192 cycles at TC temperature range: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports on-die, internal, adjustable VREFDQ generation and 1.2V pseudo-open-drain I/O. It is available in industrial temperature grades (AIT) and standard temperature grades, with options for automotive (AEC-Q100) qualification in some variants.
Technically, the MT40A1G8WE-075E utilizes Micron's advanced DRAM process technology, achieving high density with low power consumption. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The device supports burst lengths of 8 and 4, and features programmable CAS latency, additive latency, and write recovery time.
Typical applications include servers, networking equipment, high-performance computing, and embedded systems requiring high memory bandwidth. The 1G x 8 organization is ideal for error-correcting code (ECC) modules and systems with multiple memory channels.
When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
直接替换替代料： MT40A1G8WE-075E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A1G8WE-075E （相同外形与封装尺寸） ——差异在于 Package, Burst Length, Data Rate, CAS Latency, Organization.
快速对比工具——选择替代料号进行并排对比：
MT40A1G8WE-075E:B
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8WE-075E:D
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8WE-075E AIT:B
✅ 直接替换📋 参考替代料（不在目录中）
K4A8G085WC-BIWE
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.29 / 个
查看数据手册 →H5AN8G6NDJR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$35 / 个
查看数据手册 →YZ48G08V-F7HPI-M
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8WE-075E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit (1G x 8) |
| 数据速率 | 2666 MT/s (1.33 GHz) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | -40°C to +105°C (industrial) |
| Refresh Time (8192 cycles) | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| 封装 | 78-ball FBGA (8x12mm) |
| 安装类型 | Surface Mount |
| I/O Type | 1.2V pseudo-open-drain |
| VREFDQ | On-die, internal, adjustable |
| Burst Length | 8 and 4 |
| CAS 延迟 | Programmable |
| RoHS 状态 | Compliant |
| AEC-Q100 | Optional (AIT variant) |
MT40A1G8WE-075E 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply (1.2V) |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
典型应用
MT40A1G8WE-075E 适用于 6 应用s: Server Memory Modules, Networking Equipment, High-Performance Computing, Automotive Infotainment, Embedded Systems, Data Center Storage.
Server Memory Modules
The MT40A1G8WE-075E is ideal for server DIMMs (e.g., RDIMM, LRDIMM) where high density and reliability are critical. Its 8Gbit x8 organization enables ECC and high-capacity modules, supporting 2666 MT/s data rates for demanding server workloads. The 78-ball FBGA package allows compact module designs, and the industrial temperature range ensures operation in data center environments.
推荐
Networking Equipment
In networking switches and routers, the MT40A1G8WE-075E provides high-bandwidth memory for packet buffering and forwarding tables. Its 2666 MT/s data rate and 8Gbit density support high-throughput packet processing. The low 1.2V operation reduces power consumption in power-sensitive networking hardware, and the FBGA package fits dense PCB layouts.
推荐
High-Performance Computing
For HPC systems, the MT40A1G8WE-075E delivers the memory bandwidth needed for scientific simulations and AI training. Its 8Gbit density allows large memory pools, and the x8 organization supports ECC for data integrity. The 1.33 GHz clock enables fast data access, while the industrial temperature range ensures reliability in compute clusters.
推荐
Automotive Infotainment
The AIT:B variant of MT40A1G8WE-075E is AEC-Q100 qualified, making it suitable for automotive infotainment and ADAS. Its 8Gbit density supports navigation maps and multimedia, while the 2666 MT/s data rate handles real-time sensor data. The wide temperature range (-40°C to +105°C) ensures operation in harsh automotive environments.
推荐
Embedded Systems
In embedded systems, the MT40A1G8WE-075E provides high-density memory for applications like industrial controllers and medical devices. Its 8Gbit capacity and x8 interface are ideal for running Linux or real-time operating systems. The 78-ball FBGA package is suitable for compact embedded boards, and the low power consumption extends battery life in portable devices.
推荐
Data Center Storage
For NVMe SSDs and storage controllers, the MT40A1G8WE-075E offers high-speed memory for caching and metadata. Its 2666 MT/s data rate accelerates storage operations, and the 8Gbit density supports large cache pools. The low 1.2V operation reduces power in dense storage arrays, and the FBGA package enables high-density controller designs.
推荐
推荐产品汇总
工程参考数据： MT40A1G8WE-075E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A1G8WE-075E:B | K4A8G085WC-BIWE | H5AN8G6NDJR |
|---|---|---|---|---|
| Package | 78-FBGA (8x12) | 78-FBGA (8x12) | 78-FBGA (8x12) | 78-FBGA (8x12) |
| Brand | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | 2666 MT/s | 2666 MT/s | 2666 MT/s | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV | 1.2V ±60mV |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C | -40°C to +95°C |
| AEC-Q100 | No (standard) | No | No | No |
关键差异点
- Industrial temperature range up to 105°C （对比 K4A8G085WC-BIWE)
- Automotive-grade variant available （对比 H5AN8G6NDJR)
- Proven Micron quality and supply chain （对比 YZ48G08V-F7HPI-M)
设计说明
For DDR4 routing at 2666 MT/s, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential. Keep trace lengths matched within ±10 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins, and use a solid ground plane beneath the FBGA package.
The MT40A1G8WE-075E has a maximum operating temperature of 105°C. Ensure adequate airflow or heatsinking in high-density modules. The refresh rate increases at higher temperatures (32ms at >85°C), which may impact performance. Monitor junction temperature and derate if necessary.
Use on-die termination (ODT) settings as recommended in the Micron datasheet to minimize reflections. For 2666 MT/s, set ODT to RZQ/7 (34 ohms) for writes and RZQ/6 (40 ohms) for reads. Ensure VREFDQ calibration is performed during initialization for optimal signal margins.
合规信息
Standard variant is not AEC-Q100 qualified; AIT:B variant is automotive grade. RoHS compliant per Micron product page.
