H5AN8G8NAFR-UHI vs H5AN8G8NAFR-PBC 对比

详细并排对比 H5AN8G8NAFR-UHI 出自 SK hynix 和 H5AN8G8NAFR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-UHI H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix

H5AN8G8NAFR-UHI ✓ 量产中
SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ 量产中

规格对比

参数 H5AN8G8NAFR-UHI H5AN8G8NAFR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.10 $2.20
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gb —
存储组织 1G x 8 1G x 8
数据速率 DDR4-2400 (PC2400), 1200 MHz clock —
电源电压 1.2 V 1.2 V
接口 DDR4 (JEDEC-class) DDR4 (double data rate, synchronized to clock)
封装 78-ball FBGA FBGA-78
安装类型 Surface Mount Surface Mount
Lead Free Yes —
无卤 Yes —
RoHS 状态 Compliant Compliant
Technology CMOS —
Application Main memory (high density, high bandwidth) —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
CAS 延迟 [DATA_NEEDED: CAS latency for UHI speed grade] —
Refresh [DATA_NEEDED: refresh specification] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Density — 8 Gb
Speed Grade / Data Rate — [DATA_NEEDED: speed grade / data rate]
Address Inputs — A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed)
Connectivity Test Mode — TEN (optional input on x4/x8, required on x16)
Process Technology — CMOS
Lead-Free — Yes
无卤 — Yes
Datasheet Revision — Rev. 1.2 / July 2017

数据手册与资源

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