H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix
料号： H5AN8G8NAFR-UHI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $5.95 | $59.50 |
| 100 | $5.4 | $540.00 |
| 500 | $4.95 | $2,475.00 |
| 1,000 | $4.5 | $4,500.00 |
| 3,000 | $4.1 | $12,300.00 |
H5AN8G8NAFR-UHI 概述
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a category of volatile main-memory ICs that transfers data on both the rising and falling edges of the clock signal. In the memory hierarchy, DDR4 SDRAM sits as the main system memory between CPU caches and mass storage, feeding processors with high-bandwidth working data. The DDR4 generation introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank grouping, and higher densities per die, making it the dominant main-memory standard for servers, workstations, and embedded platforms.
Key features of the H5AN8G8NAFR include 8Gb (1 billion bytes x 8 organization) density per die, high-bandwidth data transfer suited to main-memory applications requiring large memory density, lead-free and halogen-free construction (RoHS compliant per the manufacturer datasheet), and JEDEC-class electrical specifications for interoperability with standard DDR4 memory controllers.
Architecturally, the device is a CMOS DRAM organized into banks with bank-group addressing, supporting burst lengths and on-die termination consistent with the DDR4 JEDEC interface. The x8 organization simplifies memory subsystem design for controllers that prefer byte-wide devices, and the FBGA package provides low-inductance ball connections essential for signal integrity at 1200 MHz clock rates.
Typical applications include desktop and server main memory modules (UDIMM, RDIMM, SODIMM), embedded computing boards, networking equipment line cards, and industrial systems requiring large DRAM capacity. The 8Gb density allows 8GB modules from just eight x8 devices.
Design considerations: DDR4 requires careful length matching of address/command and data lines, proper VTT termination, and power-rail sequencing of the 1.2V VDD supply. Speed-grade suffixes (UHI, UHC, RDC, PBC) define supported CAS latency and operating temperature range, so verify the suffix against your controller timing table.
This page synthesizes distributor stock data, drop-in alternatives within the H5AN8G8NAFR family, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： H5AN8G8NAFR-UHI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G8NAFR-UHI （相同外形与封装尺寸） ——差异在于 Interface, Package, Data Rate, Organization, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
H5AN8G8NAFR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →H5AN8G8NAFR-RDC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$2.95 / 个
查看数据手册 →H5AN8G8NAFR-PBC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$2.2 / 个
查看数据手册 →H5AN8G8NAFR-TFC
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
H5AN8G8NMFR-TFC
✅ 直接替换📋 参考替代料（不在目录中）
H5AN8G8NAFR-UHI 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Memory Density | 8 Gb |
| 存储组织 | 1G x 8 |
| 数据速率 | DDR4-2400 (PC2400), 1200 MHz clock |
| 电源电压 | 1.2 V |
| 接口 | DDR4 (JEDEC-class) |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| Lead Free | Yes |
| 无卤 | Yes |
| RoHS 状态 | Compliant |
| Technology | CMOS |
| Application | Main memory (high density, high bandwidth) |
H5AN8G8NAFR-UHI 78-ball fbga 引脚配置指南
H5AN8G8NAFR-UHI（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5AN8G8NAFR-UHI.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G8NAFR-UHI 适用于 6 应用s: Desktop and Workstation Main Memory, Server and Data Center Memory Modules, Embedded Computing and Industrial Boards, Networking and Telecom Equipment, Test and Measurement Instruments, Automotive and Rugged Embedded Systems.
Desktop and Workstation Main Memory
The H5AN8G8NAFR-UHI serves as a main-memory building block for desktop PCs and workstations, where its 8Gb x8 density allows an 8GB module from just eight devices. Its DDR4-2400 rate (1200 MHz, PC2400) matches mainstream desktop controller clocks, delivering high bandwidth without the cost of premium speed bins. The 1.2V supply reduces module power compared to DDR3, and the 78-ball FBGA package fits standard UDIMM/SODIMM land patterns. Designers should length-match data groups and set controller timing to the UHI speed-grade table from the SK Hynix datasheet for reliable operation across temperature.
推荐
Server and Data Center Memory Modules
In server platforms, the H5AN8G8NAFR-UHI populates RDIMM and LRDIMM main-memory subsystems where capacity per module drives total system memory. The 8Gb density per die and x8 organization enable high-capacity modules with byte-wide chip-select granularity, and its JEDEC-class DDR4 interface ensures interoperability with server memory controllers. The 1.2V operation keeps per-module power manageable at scale, important for data center energy budgets. Verify the UHI speed grade against the platform's supported DDR4-2400 timing set, and confirm ECC-capable controller configuration since server designs typically run x8 devices with in-chip ECC or controller-side correction.
推荐
Embedded Computing and Industrial Boards
Embedded x86 and ARM platforms with DDR4 controllers use the H5AN8G8NAFR-UHI for 4-8GB soldered-down memory. The x8 organization simplifies routing on four-layer to eight-layer embedded boards, and the FBGA-78 footprint is standard across DDR4 x8 layouts, enabling BOM flexibility. Its DDR4-2400 operation covers most industrial SoC maximums, and the 1.2V rail integrates easily with embedded PMICs. Industrial designs should confirm the operating-temperature suffix requirements and derate timing margins for extended temperature ranges, consulting the SK Hynix datasheet IDD and AC timing tables for the UHI grade.
推荐
Networking and Telecom Equipment
Routers, switches, and 5G telecom line cards require large DRAM buffers for packet processing and deep packet inspection. The H5AN8G8NAFR-UHI provides 8Gb per device with DDR4-2400 bandwidth suited to high-throughput buffering, and its x8 organization supports the byte-wide memory buses common in network processor designs. The 1.2V supply limits board-level power in densely populated line cards. Designers should account for sustained high utilization by using the datasheet worst-case IDD currents for power supply sizing, and ensure signal-integrity compliance with DDR4 length matching on high-layer-count backplane-adjacent boards.
推荐
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use large DDR4 arrays for deep acquisition memory. The H5AN8G8NAFR-UHI's 8Gb density and 2400 Mbps transfer rate support long record lengths and fast streaming, while the 1.2V rail keeps instrument internal power budgets under control. Multiple x8 devices can be banked in parallel for wider buses and higher aggregate bandwidth. Instrument designers should implement controller calibration of read/write leveling (per DDR4 requirements) and verify UHI timing compliance across the instrument's full operating temperature range per the SK Hynix datasheet AC parameters.
推荐
Automotive and Rugged Embedded Systems
Infotainment, ADAS domain controllers, and rugged gateways increasingly use DDR4 for large working memory. The H5AN8G8NAFR-UHI provides 8Gb in a compact 78-ball FBGA, allowing multi-gigabyte soldered memory within tight board space. Its DDR4-2400 rate supports camera, radar-fusion, and navigation workloads, while the 1.2V supply suits the automotive low-power rail architecture. For automotive deployments, confirm the required operating-temperature grade suffix and any AEC-Q100 qualification requirements, since suffix variants carry different temperature ranges per the SK Hynix ordering-information table in the datasheet.
推荐
推荐产品汇总
工程参考数据： H5AN8G8NAFR-UHI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G8NAFR-UHC | H5AN8G8NAFR-RDC | H5AN8G8NAFR-TFC | H5AN8G8NMFR-TFC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA family - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed-Grade Suffix | UHI | UHC | RDC | TFC | TFC (M-die) |
| RoHS / Lead-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
关键差异点
- Cost-optimized 2400 speed grade （对比 H5AN8G8NAFR-TFC)
- Proven A-die family with multiple sourcing suffixes （对比 H5AN8G8NMFR-TFC)
- Wide suffix temperature/speed selection on identical footprint （对比 H5AN8G8NAFR-PBC)
设计说明
At DDR4-2400 (1200 MHz clock), route address/command and data groups with strict length matching per DDR4 routing guidelines: keep data-group skews within controller specification and use fly-by termination for address/command lines. The 78-ball FBGA package minimizes ball inductance, but the PCB stackup still requires controlled impedance (typically 40 ohm single-ended for data) and reference-plane continuity. Simulate eye diagrams for the DQS/DQ pairs before fabrication on first-pass designs.
The H5AN8G8NAFR-UHI runs from a 1.2V VDD rail; provide VDDQ termination (VTT) at VDDQ/2 with a capable LDO or switching VTT regulator sized for peak termination currents across all devices. For an eight-device module, sum the datasheet IDD currents for your utilization profile to size the 1.2V rail; use worst-case (datasheet maximum) currents rather than typical values for supply design. Decouple each device with local bulk and high-frequency ceramics per the reference design in the SK Hynix datasheet.
The suffix encodes speed grade and temperature range: -UHI is DDR4-2400, and substituting a different suffix (UHC, RDC, PBC, TFC) changes supported CAS latency and timing. Always reprogram controller timing registers and re-run memory training/calibration after any suffix change. Also note that x8 DDR4 devices support CRC and CA parity features differently from x16 - consult the datasheet feature table, and do not assume DDR3 design rules transfer directly to DDR4 bank-group timing constraints.
DDR4 read/write leveling (ZQ calibration and MR programming) requires the ZQ ball connected to a precision external resistor (typically 240 ohm, 1%) to ground per the datasheet ballout. Place the resistor with a short, low-inductance trace to the ZQ ball and keep it away from switching regulators. Incorrect ZQ resistor values degrade on-die termination accuracy and signal integrity at 2400 Mbps.
合规信息
Per the SK Hynix H5AN8G8NAFR datasheet record on Alldatasheet, the device is Lead-Free & Halogen-Free (RoHS). REACH and conflict-minerals declarations are published separately by SK Hynix and were not present in the provided data.