H5AN8G8NCJR-RDC vs H5AN8G8NCJR-VKI 对比

详细并排对比 H5AN8G8NCJR-RDC 出自 SK hynix 和 H5AN8G8NCJR-VKI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ 量产中
SK hynix
H5AN8G8NCJR-VKI H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI ✓ 量产中

规格对比

参数 H5AN8G8NCJR-RDC H5AN8G8NCJR-VKI
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.70 $4.85
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb (1 GB) —
存储组织 x8 —
数据速率 up to 2666 Mbps 2666 Mbps
电源电压 1.2 V (VDD) 1.2 V
接口 DDR4 (JEDEC standard) Parallel
Bank Architecture 4 bank groups x 4 banks —
Burst Length BL8 —
封装 78-ball FBGA FBGA-78
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range for -RDC suffix] [DATA_NEEDED: Operating Temperature]
CAS 延迟 [DATA_NEEDED: CAS latency for -RDC speed grade] —
Generation C-die family (NCJR) —
Lead Free Yes —
无卤 Yes —
RoHS 状态 Compliant [DATA_NEEDED: RoHS Status]
存储容量 — 8 Gb
Memory Organization — 1G x8
Memory Format — DRAM
Volatile — Yes
Grade — Industrial (I suffix)
Technology — CMOS
Product Family — H5AN8G8NCJR-xxC/xI DDR4 SDRAM
Packaging — Tray
Product Status — Active

数据手册与资源

浏览全部产品 创建 BOM 获取报价