H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix
料号： H5AN8G8NCJR-RDC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.55 | $35.50 |
| 100 | $3.2 | $320.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.7 | $2,700.00 |
H5AN8G8NCJR-RDC 概述
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and high-end computing platforms. Within the memory hierarchy, DDR4 sits between the CPU cache and storage, providing the large density and high bandwidth that modern processors demand. DDR4 improved on DDR3 by lowering operating voltage from 1.5V to 1.2V, doubling bank groups to eight, and raising maximum data rates, which reduces system power while increasing effective bandwidth.
The H5AN8G8NCJR family offers fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the rising edge of CK. Key features include 8Gb density in a single die, x8 organization, on-die termination (ODT), data mask (DM) support, and JEDEC-standard DDR4 command set. The -RDC suffix denotes the 2666 Mbps speed grade with a commercial operating temperature range.
Architecturally, the device uses internal bank groups to allow interleave-friendly access patterns, and a PLL-free design with DLL for output timing alignment. Burst lengths of 8 (BL8) with sequential and interleave options, plus programmable CAS latency, let memory controllers optimize latency versus throughput. The 78-ball FBGA surface-mount package minimizes parasitic inductance, supporting high-speed signal integrity on fly-by-terminated DDR4 channels.
Typical applications include server DIMMs and memory-down designs, workstations, industrial computing, networking equipment, and embedded systems requiring large memory density with high bandwidth. The x8 organization suits ECC-based server designs using x8-based chipkill implementations.
Design consideration: DDR4 fly-by routing requires length-matched traces, VTT termination, and careful controller training; always validate the speed-grade suffix (-RDC versus -XNC or -VKC) against your controller's supported data rate.
This page synthesizes distributor availability, drop-in alternatives within the SK Hynix 8Gb DDR4 family, and JEDEC-compatible cross-brand equivalents, plus practical design notes not found in the raw datasheet.
直接替换替代料： H5AN8G8NCJR-RDC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G8NCJR-RDC （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Interface, Organization, Memory Size.
快速对比工具——选择替代料号进行并排对比：
H5AN8G8NCJR-PBC
✅ 直接替换✓ 有现货
$2.4 / 个
查看数据手册 →H5AN8G8NCJR-XNC
✅ 直接替换✓ 有现货
$30.6923 / 个
查看数据手册 →H5AN8G8NCJR-VKC
✅ 直接替换✓ 有现货
$28.13 / 个
查看数据手册 →H5AN8G8NDJR-XNC
✅ 直接替换✓ 有现货
$24.5 / 个
查看数据手册 →H5AN8G8NMJR-XNC
✅ 直接替换📋 参考替代料（不在目录中）
K4A8G085WC-BCRC
✅ 直接替换✓ 有现货
$4.3 / 个
查看数据手册 →MT40A1G8AG-062E
✅ 直接替换✓ 有现货
$3.1 / 个
查看数据手册 →H5AN8G8NCJR-RDC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gb (1 GB) |
| 存储组织 | x8 |
| 数据速率 | up to 2666 Mbps |
| 电源电压 | 1.2 V (VDD) |
| 接口 | DDR4 (JEDEC standard) |
| Bank Architecture | 4 bank groups x 4 banks |
| Burst Length | BL8 |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| Generation | C-die family (NCJR) |
| Lead Free | Yes |
| 无卤 | Yes |
| RoHS 状态 | Compliant |
H5AN8G8NCJR-RDC 78-ball fbga 引脚配置指南
H5AN8G8NCJR-RDC（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5AN8G8NCJR-RDC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5AN8G8NCJR-RDC 适用于 6 应用s: Server Main Memory (RDIMM / Memory-Down), Workstation and High-End Desktop Memory, Networking and Telecom Equipment, Industrial Computing and Embedded Systems, Test and Measurement Instrumentation, Automotive and Transportation Infotainment.
Server Main Memory (RDIMM / Memory-Down)
The H5AN8G8NCJR-RDC fits server main-memory designs where the x8 organization enables x8-based SDDC (single-device data correction) under ECC, a chipkill-class reliability feature required in enterprise platforms. Its 2666 Mbps data rate and 1.2V operation deliver high bandwidth with reduced power versus DDR3, and the 78-ball FBGA package is the industry-standard component form for RDIMM/LRDIMM assembly and memory-down server boards. Placed on a fly-by-terminated DDR4 channel with registered clocking, the device sustains full-rate operation at 1333 MHz CK, giving roughly 21 GB/s per device peak bandwidth. Validation should include controller training at the -R timing table to guarantee margin across the commercial temperature range.
推荐
Workstation and High-End Desktop Memory
Workstation platforms benefit from the 8Gb density per device of the H5AN8G8NCJR-RDC, allowing multi-GB DIMM configurations with fewer chips per module. The 2666 Mbps grade matches mainstream desktop and workstation memory clocks, and the 1.2V rail reduces module thermal load compared with DDR3-class parts, simplifying heatsink decisions on buffered and unbuffered modules. In an ECC UDIMM design, the x8 organization supports single-bit error correction per device, improving uptime for CAD, simulation, and content-creation workloads. The device's BL8 burst and 4-bank-group architecture sustain sequential bandwidth for large dataset handling. Layout must respect DDR4 length matching and VTT termination to achieve eye margin at full data rate.
推荐
Networking and Telecom Equipment
Routers, switches, and telecom line cards use DDR4 as packet-buffer and control-plane memory. The H5AN8G8NCJR-RDC provides 8Gb density and 2666 Mbps bandwidth in a compact 78-ball FBGA, fitting memory-down layouts on dense line cards where module height is restricted. Its bank-group architecture sustains the mixed read/write patterns typical of packet buffering, while 1.2V operation lowers system power in always-on network equipment. The x8 bus width simplifies controller interfacing for network SoCs that expose 16/32/64-bit DDR4 channels. Designers should size trace lengths for multi-rank or multi-device fly-by topologies and retrain timing at production test to hold eye margin across the commercial temperature range.
推荐
Industrial Computing and Embedded Systems
Industrial PCs, machine-vision controllers, and edge-compute gateways need high-bandwidth volatile memory; the H5AN8G8NCJR-RDC supplies 8Gb density and 2666 Mbps throughput in a surface-mount FBGA that survives vibration better than socketed DIMMs. The 1.2V core keeps thermal budgets manageable in fanless enclosures, and its commercial temperature range suits controlled factory-floor environments (industrial-rated variants should be selected for extended range). The x8 organization integrates cleanly with industrial SoCs offering 32/64-bit DDR4 buses, and JEDEC-standard command timing enables multi-vendor second sourcing. Designers should implement proper power-rail sequencing and use controller training at boot to maintain data integrity despite temperature drift.
推荐
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators rely on deep capture memory, and the H5AN8G8NCJR-RDC's 8Gb density supports long record lengths per instrument channel bank. Its 2666 Mbps rate provides sustained write bandwidth for real-time streaming acquisition architectures, while the 1.2V supply reduces internal heating in thermally sensitive measurement front ends. The 78-ball FBGA allows compact memory-down arrays around the acquisition FPGA, and the x8 bus enables flexible 16/32/64-bit channel scaling. Instruments typically run DDR4 at reduced clocks for timing margin; the -R grade still delivers full bandwidth headroom at standard 1333 MHz operation with conventional controller training and termination settings.
推荐
Automotive and Transportation Infotainment
Automotive IVI head units, digital clusters, and ADAS domain controllers demand high-bandwidth DRAM; the H5AN8G8NCJR-RDC's 8Gb density and 2666 Mbps rate support multi-camera sensor buffering and rich graphics stacks. Note that this -C (commercial temperature) grade is intended for platforms with cabin-grade thermal control; automotive-qualified memory variants should be selected for under-hood or extreme-temperature zones. The 78-ball FBGA supports memory-down placement on compact compute modules, and the x8 organization fits typical SoC 32-bit DDR4 buses. Designers must implement rail sequencing, signal-integrity simulation for the flex/cable interconnects common in vehicle deployments, and verify thermal derating of the data rate in hot in-cabin conditions.
推荐
推荐产品汇总
工程参考数据： H5AN8G8NCJR-RDC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G8NCJR-PBC | H5AN8G8NCJR-XNC | H5AN8G8NCJR-VKC | K4A8G085WC-BCRC | MT40A1G8AG-062E |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | x8 | x8 | x8 | x8 | x8 | x8 |
| Data Rate | up to 2666 Mbps | up to 2133 Mbps class | up to 3200 Mbps | 2666 Mbps class | 2666 Mbps class | 2666 Mbps class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
关键差异点
- Balanced 2666 Mbps bandwidth at mainstream cost （对比 H5AN8G8NCJR-XNC)
- JEDEC-standard cross-brand second sourcing （对比 K4A8G085WC-BCRC)
- x8 organization enables server-class ECC (SDDC) （对比 H5AN8G6NAFR-VKC)
设计说明
DDR4 fly-by routing is mandatory for multi-device topologies: route address/command to each 78-ball FBGA device in daisy-chain with on-die termination (ODT) absorbing reflections, while DQ/DQS pairs are point-to-point and must be length-matched within controller-recommended skew (typically a few mils per inch of trace, per JEDEC DDR4 design guidance). Maintain a solid reference plane under all DDR4 nets and keep VTT distribution as a low-inductance plane with decoupling near each termination load. Follow the SK Hynix DDR4 design guide and your controller vendor's layout checklist for exact constraints.
The device operates from 1.2V VDD plus VDDQ; use wide planes or pours rather than traces to keep rail impedance low during simultaneous switching of x8 DQ loads. Provide VPP (2.5V) per DDR4 requirements. Estimated: at full 2666 Mbps operation with 8 DQ pins active, per-device dynamic current is on the order of hundreds of milliamps; budget bulk and 100 nF ceramic decoupling per device and verify with rail transient simulation. Always sequence VDD/VDDQ before or together with VPP per controller vendor guidance.
Speed-grade suffixes are not interchangeable assumptions: the -RDC (2666 Mbps), -VKC, -PBC, and -XNC grades carry different AC timing tables. Substituting a slower grade into a design validated at 3200 Mbps will fail margin tests, and omitting controller retraining after a second-source swap (e.g., Samsung K4A8G085WC or Micron MT40A1G8AG) can cause boot failures even when the footprint is identical. Re-run memory training and margin validation (read/write eye, Vref offset sweep) for every die/speed combination in production.
合规信息
Datasheet aggregator listing for H5AN8G8NCJR-XXC states Lead-Free & Halogen-Free construction. REACH and conflict-minerals status not stated in provided data.