H5AN8G8NCJR-UHC vs H5AN8G8NCJR-VKC 对比

详细并排对比 H5AN8G8NCJR-UHC 出自 SK hynix 和 H5AN8G8NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-UHC H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

H5AN8G8NCJR-UHC ✓ 量产中
SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ 量产中

规格对比

参数 H5AN8G8NCJR-UHC H5AN8G8NCJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.88 $28.13
存储器类型 DDR4 SDRAM DDR4 SDRAM (volatile)
Density 8 Gb —
存储组织 1G x 8 —
Speed Grade DDR4-2400 (PC4-19200) —
Supply Voltage (VDD) 1.2 V 1.14 V to 1.26 V (1.2 V class)
封装 FBGA-78 FBGA-78 (78-ball fine-pitch BGA)
安装类型 Surface Mount (BGA) Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] 0C to +85C
RoHS Code Yes —
REACH Compliance Yes (per distributor record) —
Lead-Free Yes (family documented as Lead-Free & Halogen-Free) —
无卤 Yes —
Part Life Cycle Code Active —
Access Type Synchronous, both clock edges (DDR) —
Memory Configuration Bank-group architecture DDR4 —
Die Revision CJR (C-die family) —
Manufacturer SK hynix Inc. —
存储容量 — 8 Gbit
Memory Organization — 1G x 8
数据速率 — 2666 Mbps/pin
Clock Frequency — 1.6 GHz
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
接口 — Parallel (DDR4)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
RoHS 状态 — Compliant
CAS 延迟 — [DATA_NEEDED: CAS Latency]
Refresh Rate — [DATA_NEEDED: refresh period]

数据手册与资源

浏览全部产品 创建 BOM 获取报价