H5AN8G8NCJR-VKI vs MT40A1G8AG-062E 对比

详细并排对比 H5AN8G8NCJR-VKI 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-VKI H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI ✓ 量产中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中

规格对比

参数 H5AN8G8NCJR-VKI MT40A1G8AG-062E
品牌 SK hynix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.85 $3.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gb 8 Gbit
Memory Organization 1G x8 —
数据速率 2666 Mbps —
电源电压 1.2 V —
接口 Parallel Parallel
Memory Format DRAM —
Volatile Yes —
封装 FBGA-78 78-FBGA (7.5 x 11 mm)
安装类型 Surface Mount Surface Mount (BGA)
Grade Industrial (I suffix) —
工作温度 [DATA_NEEDED: Operating Temperature] —
Technology CMOS —
Product Family H5AN8G8NCJR-xxC/xI DDR4 SDRAM —
Packaging Tray —
Product Status Active —
RoHS 状态 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
存储组织 — 1G x 8
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Supply Voltage (VDD) — 1.2 V
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

数据手册与资源

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