H5AN8G8NCJR-XNC vs H5AN8G8NCJR-VKC 对比
详细并排对比 H5AN8G8NCJR-XNC 出自 SK hynix 和 H5AN8G8NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NCJR-XNC | H5AN8G8NCJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $30.69 | $28.13 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (volatile) |
| 存储容量 | 8 Gbit | 8 Gbit |
| 存储组织 | 1 Gb x 8 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2666 Mbps/pin |
| Clock Frequency | 1.6 GHz | 1.6 GHz |
| 电源电压 | 1.14 V to 1.26 V (1.2 V nominal) | — |
| 封装 | 78-ball FBGA, 7.5 mm x 11 mm | FBGA-78 (78-ball fine-pitch BGA) |
| 工作温度 | 0 C to +85 C | 0C to +85C |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (8-bit data interface) | Parallel (DDR4) |
| Architecture | Bank-group based DDR4 | — |
| Refresh | Auto self-refresh | — |
| Precharge | Auto precharge | — |
| On-Chip Termination | Dynamic ODT | — |
| Calibration | ZQ calibration, write leveling | — |
| Error Handling | CRC function | — |
| Reset | Asynchronous reset | — |
| Data Mask | Data mask function | — |
| Current - Operating | 39 mA | — |
| Current - Standby | 30 mA | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes | — |
| Memory Organization | — | 1G x 8 |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (1.2 V class) |
| Operating Current (typ) | — | 30 mA |
| Standby Current (typ) | — | 3 mA |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh period] |