H5AN8G8NCJR-XNC vs H5AN8G8NCJR-VKC Comparison

Detailed side-by-side comparison of H5AN8G8NCJR-XNC by SK hynix and H5AN8G8NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Active

Specification Comparison

Parameter H5AN8G8NCJR-XNC H5AN8G8NCJR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $30.69 $28.13
Memory Type DDR4 SDRAM DDR4 SDRAM (volatile)
Memory Size 8 Gbit 8 Gbit
Organization 1 Gb x 8 —
Data Rate 3200 Mbps (DDR4-3200) 2666 Mbps/pin
Clock Frequency 1.6 GHz 1.6 GHz
Supply Voltage 1.14 V to 1.26 V (1.2 V nominal) —
Package 78-ball FBGA, 7.5 mm x 11 mm FBGA-78 (78-ball fine-pitch BGA)
Operating Temperature 0 C to +85 C 0C to +85C
Mounting Type Surface Mount Surface Mount
Interface DDR4 (8-bit data interface) Parallel (DDR4)
Architecture Bank-group based DDR4 —
Refresh Auto self-refresh —
Precharge Auto precharge —
On-Chip Termination Dynamic ODT —
Calibration ZQ calibration, write leveling —
Error Handling CRC function —
Reset Asynchronous reset —
Data Mask Data mask function —
Current - Operating 39 mA —
Current - Standby 30 mA —
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes —
Memory Organization — 1G x 8
Supply Voltage (VDD) — 1.14 V to 1.26 V (1.2 V class)
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
CAS Latency — [DATA_NEEDED: CAS Latency]
Refresh Rate — [DATA_NEEDED: refresh period]

Datasheets & Resources

Browse All Products Create BOM Request Quote