H5AN8G8NCJR-XNC vs H5AN8G8NDJR-XNC 对比

详细并排对比 H5AN8G8NCJR-XNC 出自 SK hynix 和 H5AN8G8NDJR-XNC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NCJR-XNC H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix

H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix

H5AN8G8NCJR-XNC ✓ 量产中
SK hynix
H5AN8G8NDJR-XNC H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix

H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix

H5AN8G8NDJR-XNC ✓ 量产中

规格对比

参数 H5AN8G8NCJR-XNC H5AN8G8NDJR-XNC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $30.69 $24.50
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit 8 Gbit (1 G x 8)
存储组织 1 Gb x 8 —
数据速率 3200 Mbps (DDR4-3200) 3200 MT/s (DDR4-3200)
Clock Frequency 1.6 GHz 1.6 GHz (I/O clock)
电源电压 1.14 V to 1.26 V (1.2 V nominal) —
封装 78-ball FBGA, 7.5 mm x 11 mm FBGA-78 (7.5 x 11 mm)
工作温度 0 C to +85 C —
安装类型 Surface Mount Surface Mount
接口 DDR4 (8-bit data interface) Parallel
Architecture Bank-group based DDR4 —
Refresh Auto self-refresh —
Precharge Auto precharge —
On-Chip Termination Dynamic ODT —
Calibration ZQ calibration, write leveling —
Error Handling CRC function —
Reset Asynchronous reset —
Data Mask Data mask function —
Current - Operating 39 mA —
Current - Standby 30 mA —
RoHS 状态 Compliant —
Lead-Free / Halogen-Free Yes —
Supply Voltage (VDD) — 1.14 V to 1.26 V (nominal 1.2 V)
I/O Voltage (VDDQ) — 1.14 V to 1.26 V (nominal 1.2 V)
Operating Temperature (TC) — 0°C to +95°C
Memory Organization — 1G x 8
RoHS — Compliant
Lead-Free — Yes
Packaging — Tray
Status — Active

数据手册与资源

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