H5ANAG4NBJR-RDC vs H5ANAG6NBJR-VKC 对比

详细并排对比 H5ANAG4NBJR-RDC 出自 SK hynix 和 H5ANAG6NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG4NBJR-RDC H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC - 16Gb DDR4 SDRAM 4Gx4 1.2V | SK hynix

H5ANAG4NBJR-RDC ✓ 量产中

规格对比

参数 H5ANAG4NBJR-RDC H5ANAG6NBJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.75 $15.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gb (2 GB) —
存储组织 4G x 4 [DATA_NEEDED: x16 organization per datasheet]
Supply Voltage VDD 1.2 V —
数据速率 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) 2666 Mbps (per family reference, VKC speed code)
封装 78-ball FBGA FBGA-96 (PBGA96)
安装类型 Surface Mount Surface Mount
Prefetch 16n (bank group architecture) —
接口 SSTL-12 DDR4, SSTL-12
特性 Bank groups, CA parity, data CRC, ODT, DLL-off mode —
Refresh Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] —
Operating Temperature (case) -40C to +85C (industrial; extended to 95C per datasheet conditions) —
Temperature Grade Suffix RDC - industrial temperature, lead-free, halogen-free —
RoHS 状态 Compliant (lead-free / halogen-free per RDC suffix) [DATA_NEEDED: RoHS status]
VDDQ 1.2 V —
Product Family SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series —
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
电源电压 — 1.2 V (DDR4 standard)
工作温度 — -40C to +95C (family grade reference)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

数据手册与资源

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