H5ANAG6NBJR-UHC vs H5AN4G6NBJR-RDC 对比
详细并排对比 H5ANAG6NBJR-UHC 出自 SK hynix 和 H5AN4G6NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NBJR-UHC | H5AN4G6NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.09 | $6.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 接口 | DDR4 (CMOS) | CMOS, fully synchronous |
| 封装 | PBGA96 / FBGA-96 (TFBGA) | — |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| 工作温度 | -40C to +95C | — |
| Refresh | Auto / Self Refresh | — |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | Yes |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | Yes |
| Write Leveling | Supported | Yes |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS 状态 | RoHS Compliant | — |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| 电源电压 | — | 1.2 V |
| Package Code | — | TFBGA (FBGA-96) |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Number of Terminals | — | 96 |
| 安装类型 | — | Surface Mount |
| Temperature Grade | — | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| CRC Function | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |