H5ANAG6NCJR-XNC vs H5ANAG6NBJR-RDC 对比
详细并排对比 H5ANAG6NCJR-XNC 出自 SK hynix 和 H5ANAG6NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NCJR-XNC | H5ANAG6NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $84.97 | $9.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gbit | — |
| Memory Organization | 1G x 16 | 16Gb x16 |
| 数据速率 | 3200 Mbps/pin | 2666 Mbps (speed grade -RDC) |
| Supply Voltage Range | 1.14 V to 1.26 V (VDD/VDDQ) | — |
| 接口 | Parallel | Synchronous, double data rate |
| 封装 | FBGA-96 | FBGA (Ball Grid Array), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Packaging | Tray | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS Status] |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| Clocking | — | Fully synchronous to both clock edges |
| Technology | — | CMOS |
| Standard | — | JEDEC DDR4 SDRAM |
| Application | — | Main memory |
| 工作温度 | — | [DATA_NEEDED: Operating Temperature Range] |
| On-Die Termination (ODT) | — | Supported (DDR4 feature) |
| Bank Group Architecture | — | DDR4 bank groups (per JEDEC DDR4) |