H5ANAG6NCJR-XNC vs H5ANAG6NBJR-UHC 对比
详细并排对比 H5ANAG6NCJR-XNC 出自 SK hynix 和 H5ANAG6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NCJR-XNC | H5ANAG6NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $84.97 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gbit | — |
| Memory Organization | 1G x 16 | — |
| 数据速率 | 3200 Mbps/pin | — |
| Supply Voltage Range | 1.14 V to 1.26 V (VDD/VDDQ) | — |
| 接口 | Parallel | DDR4 (CMOS) |
| 封装 | FBGA-96 | PBGA96 / FBGA-96 (TFBGA) |
| 安装类型 | Surface Mount | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | Supported |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | Supported |
| CRC Function | Yes | — |
| Write Leveling | Yes | Supported |
| Packaging | Tray | — |
| RoHS 状态 | Compliant | RoHS Compliant |
| Density | — | 4 Gb |
| 存储组织 | — | 256M x 16 |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| 工作温度 | — | -40C to +95C |
| Refresh | — | Auto / Self Refresh |
| Data Mask | — | Supported (DM function) |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |