H5ANAG6NCR-PBC vs H5ANAG6NAMR-UHC 对比

详细并排对比 H5ANAG6NCR-PBC 出自 SK hynix 和 H5ANAG6NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG6NCR-PBC H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC - 16Gb DDR4 SDRAM x16, FBGA-96 | SK hynix

H5ANAG6NCR-PBC ✓ 量产中
SK hynix
H5ANAG6NAMR-UHC H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC - 16Gb DDR4-2400 SDRAM x16 1.2V | SK hynix

H5ANAG6NAMR-UHC ✓ 量产中

规格对比

参数 H5ANAG6NCR-PBC H5ANAG6NAMR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $70.20 $4.50
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16Gb (2GB) —
存储组织 x16 (1G x 16) 1G x 16
电源电压 1.14 V to 1.26 V (nominal 1.2 V) —
Transfer Rate 3200 Mbps (family, per XNCR datasheet; PBC speed grade [DATA_NEEDED: exact speed grade Mbps]) —
封装 FBGA-96 FBGA-96 (PBGA96)
Number of Terminals 96 balls —
工作温度 0C to 85C [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount (BGA solder ball)
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Dynamic ODT Yes —
ZQ Calibration Yes —
CRC Function Yes —
Write Leveling Yes —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Maximum Standby Current [DATA_NEEDED: maximum standby current for PBC speed grade] —
CAS 延迟 [DATA_NEEDED: CAS latency for PBC speed grade] [DATA_NEEDED: CL for UHC bin]
Memory Density — 16 Gbit (2 GB)
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Refresh — Self-refresh and auto-refresh (DDR4 standard 64 ms)
接口类型 — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
生命周期状态 — Active production

数据手册与资源

浏览全部产品 创建 BOM 获取报价