H5ANAG6NCR-RDC vs H5ANAG8NCR-RDC 对比
详细并排对比 H5ANAG6NCR-RDC 出自 SK hynix 和 H5ANAG8NCR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5ANAG6NCR-RDC | H5ANAG8NCR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $72.10 | $1.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gb (2 GB) | — |
| 存储组织 | 1G x 16 | 2G x 8 |
| 数据速率 | 3200 Mbps (PC4-25600 class) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 封装 | 96-ball FBGA | 78-ball FBGA |
| Package Body | Rectangular, 8 mm width | — |
| Maximum Standby Current | 0.074 A | — |
| 安装类型 | Surface Mount | Surface Mount |
| Number of Terminals (Balls) | 96 | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask (DM) Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Interval | [DATA_NEEDED: Refresh Interval] | — |
| Density | — | 16 Gbit |
| 接口 | — | DDR4 (fully synchronous, both clock edges) |
| Family | — | H5ANAG8N 16Gb DDR4 |
| Application Segment | — | Main memory (server, networking, industrial, embedded) |
| Max Data Rate | — | [DATA_NEEDED: speed bin data rate in MT/s] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Refresh | — | [DATA_NEEDED: refresh specification] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |