H5ANAG8NCR-RDC - DDR4 SDRAM 16Gb 2Gx8 1.2V | SK hynix
料号： H5ANAG8NCR-RDC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $1 | $10.00 |
| 100 | $1 | $100.00 |
| 500 | $1 | $500.00 |
| 1,000 | $1 | $1,000.00 |
H5ANAG8NCR-RDC 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory standard and sits within the broader DRAM -> synchronous DRAM -> volatile memory hierarchy. Compared to DDR3, DDR4 reduces operating voltage by roughly 20% (from 1.5V to 1.2V), increases bank count, and enables higher data rates per device, which is why it became the dominant main memory for servers, workstations, and networking equipment.
Key characteristics of the H5ANAG8N family include the 16Gb single-die density, x8 organization enabling ECC-based server architectures (8 of 9 chips plus ECC parity on RDIMM designs), 1.2V VDD operation for reduced power, and a JEDEC-standard 78-ball FBGA footprint for drop-in board-level compatibility across speed grades. The -RDC suffix identifies a specific speed bin and operating-temperature rating within the family.
Architecturally, the device is fully synchronous: addresses, commands, and control inputs are registered on clock edges, and internal bank-group parallelism sustains high effective bandwidth. SK hynix states its 16Gb DDR4 delivers up to 3200 MT/s while consuming 20% less operating voltage than DDR3.
Typical applications include server DIMM modules (RDIMM/LRDIMM x8 population with ECC), networking and telecom line cards, industrial embedded controllers, and storage systems that still source DDR4 components for stable long-term supply.
Design consideration: DRAM speed-bin suffixes (e.g., -RDC versus -VKC versus -XNC) define maximum data rate and AC timing; verify the memory controller supports the target speed bin and that termination and trace-length matching follow the DDR4 routing guidelines.
This page synthesizes distributor data, same-family drop-in alternatives, and application guidance beyond the raw datasheet.
直接替换替代料： H5ANAG8NCR-RDC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5ANAG8NCR-RDC （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Interface, RoHS Status, Memory Size.
快速对比工具——选择替代料号进行并排对比：
H5ANAG8NCJR-XNC
✅ 直接替换✓ 有现货
$65.625 / 个
查看数据手册 →H5ANAG8NCMR-VKC
✅ 直接替换✓ 有现货
$8.05 / 个
查看数据手册 →H5ANAG8NAMR-UHC
✅ 直接替换✓ 有现货
$2.15 / 个
查看数据手册 →H5ANAG8NBJR-RDC
✅ 直接替换✓ 有现货
$3.55 / 个
查看数据手册 →H5ANAG8NCMR-RDC
✅ 直接替换📋 参考替代料（不在目录中）
H5ANAG8NCR-RDC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 16 Gbit |
| 存储组织 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V |
| 封装 | 78-ball FBGA |
| 安装类型 | Surface Mount |
| 接口 | DDR4 (fully synchronous, both clock edges) |
| Family | H5ANAG8N 16Gb DDR4 |
| Application Segment | Main memory (server, networking, industrial, embedded) |
H5ANAG8NCR-RDC 78-ball fbga 引脚配置指南
H5ANAG8NCR-RDC（78-ball fbga 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： H5ANAG8NCR-RDC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5ANAG8NCR-RDC 适用于 6 应用s: Server RDIMM Main Memory, Networking and Telecom Line Cards, Industrial Embedded Controllers, Storage Systems and SSD Controllers, Test and Measurement Instruments, Aerospace and Rugged Embedded Computing.
Server RDIMM Main Memory
The H5ANAG8NCR-RDC's 16Gb density and x8 organization make it a primary building block for ECC-protected server memory modules. RDIMM designs populate x8 DDR4 chips alongside registered clock drivers and data buffers, so 2G x 8 parts map directly onto standard module topologies. At 1.2V, power per bit drops roughly 20% versus DDR3 at equal workloads, reducing thermal load in dense 1U/2U servers. Designers must match the -RDC speed bin to the memory controller's supported data rate and validate refresh and ZQ calibration timing per the SK hynix datasheet.
推荐
Networking and Telecom Line Cards
Switch, router, and telecom line cards use x8 DDR4 components such as the H5ANAG8NCR-RDC for packet buffering, flow tables, and control-plane memory. The 16Gb single-die density allows high buffer capacity with fewer devices, simplifying routing on high-layer-count boards. Fully synchronous operation on both clock edges sustains the bandwidth these platforms require. Because the 78-ball FBGA footprint is common across SK hynix 16Gb DDR4 speed grades, designers can dual-source within the family by adjusting only speed-bin constraints and controller training parameters.
推荐
Industrial Embedded Controllers
Industrial PCs, motion controllers, and machine-vision systems that still specify DDR4 use the H5ANAG8NCR-RDC where main memory density and a stable long-term supply matter more than absolute latest-generation performance. SK hynix positions its 16Gb DDR4 explicitly for industrial and embedded platforms. The 1.2V rail integrates easily with standard industrial power trees, and the -RDC temperature rating supports industrial environments. Engineers should pre-position inventory and validate at least one same-family alternate suffix given DDR4's phase-out trajectory.
推荐
Storage Systems and SSD Controllers
Enterprise storage arrays and high-end SSD controllers use 16Gb DDR4 DRAM such as the H5ANAG8NCR-RDC for mapping tables, write caches, and metadata. The 2G x 8 organization fits 64-bit-plus-ECC bus topologies typical of storage ASICs, and 16Gb density reduces component count versus stacking lower-density dies. Latency consistency and refresh behavior defined in the SK hynix datasheet are the key validation points, since storage firmware often depends on bounded worst-case DRAM access timing.
推荐
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with predictable latency; 16Gb DDR4 components like the H5ANAG8NCR-RDC provide that depth at 1.2V power levels compatible with instrument thermal budgets. The JEDEC-standard 78-ball FBGA footprint simplifies second-sourcing across SK hynix die revisions, and the family's 3200 MT/s-class bandwidth supports high-throughput streaming acquisition engines. Calibration routines should account for the -RDC speed bin's AC parameters as documented by SK hynix.
推荐
Aerospace and Rugged Embedded Computing
Rugged embedded and aerospace compute modules use DDR4 components for main memory where supply continuity and documented revision control are critical. The H5ANAG8NCR-RDC's commodity JEDEC footprint allows standard memory-controller integration while its family structure supports lock-down on a single die revision for qualification. Thermal derating per the -RDC temperature rating must be verified against the enclosure's conduction-cooled design. Buyers in this segment typically secure last-time-buy inventory of 16Gb DDR4 as the industry transitions to DDR5.
推荐
推荐产品汇总
工程参考数据： H5ANAG8NCR-RDC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5ANAG8NCJR-XNC | H5ANAG8NCMR-VKC | H5ANAG8NAMR-UHC | H5ANAG8NBJR-RDC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Die Revision | C family (RDC suffix) | C family, XNC bin | CM die revision, VKC bin | AM die revision, UHC bin | BJ die revision, RDC bin |
关键差异点
- 16Gb single-die density reduces component count （对比 H5ANAG8NAMR-UHC)
- x8 organization enables ECC server topologies （对比 H5ANAG6NCJR-XNC)
- 1.2V DDR4 operation cuts power vs DDR3 （对比 H5ANAG8NCMR-VKC)
设计说明
DDR4 fly-by routing requires careful trace-length matching across address/command lines and per-byte length matching for DQ/DQS pairs. Follow the SK hynix DDR4 design guide and your memory controller's layout checklist: maintain controlled impedance, use on-die termination (ODT) settings from the datasheet's timing tables for the -RDC speed bin, and simulate eye diagrams at the target data rate before committing the board.
The H5ANAG8NCR-RDC runs from a 1.2V VDD rail with separate VPP requirements typical of DDR4. Size VTT termination regulators for peak termination current across all populated ranks, and decouple each FBGA power ball with low-ESR ceramics placed close to the device. Estimated: dynamic current scales with data rate, so verify rail droop during simultaneous read/write burst patterns at the maximum controller speed.
Die revisions within the H5ANAG8N family (AM, BJ, CM, C) can differ in AC timing margins and refresh details even at the same suffix. When qualifying a board, lock the approved die revision or re-run memory training and burn-in whenever a substitution occurs. Also verify the -RDC bin against your controller's supported speed list; mixing speed bins across ranks on one channel forces the entire channel to the slower bin.
合规信息
Compliance status was not stated in the verified web data; confirm via SK hynix product page or distributor compliance documents.